CDBFR0140R

SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0140R (RoHs Device) Io = 100 mA V R = 40 Volts 1005(2512) 0.102(2.60) 0.095(2.40) Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.051(1.30) 0.043(1.10) Mechanical data 0.035(0.90) Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.). 0.040(1.00) Typ. 0.027(0.70) 0.020(0.50) Typ. Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 45 40 100 1 -40 +125 +125 V V mA A O 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) I FSM T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals I F = 10mA V R = 10V Conditions Symbol Min Typ Max Unit VF IR CT 6 0.45 1 V uA pF f = 1 MHz, and 10 VDC reverse voltage REV:A QW-A1061 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBFR0140R) Fig. 1 - Forward characteristics 1000 1m 100u Fig. 2 - Reverse characteristics Reverse current (...