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CDBFR0230

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0230(RoHs Device) Io = 200 mA V R = 30 Volts Features Designed fo...


Comchip Technology

CDBFR0230

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0230(RoHs Device) Io = 200 mA V R = 30 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.). 0.040(1.00) Typ. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Sunction temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 200 3000 150 -40 +125 +125 V V mA mA mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terimnals V R = 30V Conditions I F = 200 mA DC Symbol Min Typ Max Unit VF IR CT 9 0.50 30 V uA pF F = 1 MHZ and 10 VDC reverse voltage REV:A QW-A1065 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBFR0230) Fig. 1 - Forward characteristics 1000 10m 1m Fig. 2 - Reverse characteristi...




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