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TQM7M5008

TriQuint Semiconductor

Quad-Band GSM/EDGE Polar Power Amplifier Module

11 TQM7M5008 Preliminary Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Features Functional Block Diagram...


TriQuint Semiconductor

TQM7M5008

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Description
11 TQM7M5008 Preliminary Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Features Functional Block Diagram GSM/EDGE Multi-Mode Capability Optimized for Operation with Qualcomm’s Multi-mode MSM6280/RTR6275 chip sets - 87dBm typical Rx Noise - 38dB Typical ACPR (200KHz) - 66dB Typical ACPR (400 KHz) - 76dB Typical ACPR (600 KHz) 1% Typical EVM rms > 50dB Typical Dynamic Range GPRS Class 12 Internally Matched Input and Output RoHS, MSL260C pending Product Description The TQM7M5008 is a small (7x7mm), GSM/EDGE PAM for handset applications. This module has been optimized for excellent EDGE efficiency , ACPR and EVM in an open loop polar modulation environment at EDGE class E2+ operation while maintaining high GSM/GPRS efficiency. The TQM7M5008 was optimized for operation with the Qualcomm RTR6275 regarding input power range and Rx band performance. High reliability is assured by utilizing TriQuint’s 3rd generation InGaP HBT technology and by TriQuint’s proven module design techniques. Applications GSM/EDGE Handsets GSM/EDGE Wireless Cards and Data Links Package Style Package Size: LGA 7 x 7 x 1.1 mm Top View Electrical Specifications Parameter 850 Band Min 50 3 20 Typ 35.5 55 5.5 29 25 -58 3 5.5 8 3 5.5 20 8 Max Min 34.5 48 3 900 Band Typ 35.3 53 5.5 29 25 -58 8 3 5.5 20 8 Max DCS Band Min 43 3 Typ 50 5.5 28 25 -58 8 3 5.5 22 8 Max Min 32.3 44 3 32.5 33.9 PCS Band Typ 33.2 50 5.5 28 26 -58 8 8 Max GSM Pout 34.8 Efficiency Pin EDGE Pout ...




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