NTD50N03R

NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features Planar Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 12.5 mW @ 10 V 19 mW @ 4.5 V N−Channel D ID MAX 45 A Applications VCORE DC−DC Buck Converter Applications Optimized for High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current Current Limited by Package TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dv/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 25 "20 9.2 7.2 2.1 7.8 6.0 1.5 45 35 50 180 45 −55 to 175 45 8.0 20 W A A °C A V/ns mJ W A W Unit V V A G S 4 4 4 A 1 2 2 3 3 CASE 369AA CASE 369D CASE 369AC DPAK DPAK 3 IPAK (Surface Mount) (Straight Lead) (Straight Lead) STYLE 2 STYLE 2 2 3 1 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW T50 N03RG 3 Source 1 Gate 3 Source 2 Drain = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD50N03R/D 4 Drain YWW T50 N03RG 1 G...