NTD65N03R

NTD65N03R Power MOSFET 25 V, 65 A, Single N−Channel, DPAK Features Low RDS(on) Ultra Low Gate Charge Low Reverse Recovery Charge Pb−Free Packages are Available V(BR)DSS 25 V http://onsemi.com RDS(on) TYP 6.5 mW @ 10 V 9.7 mW @ 4.5 V N−Channel D ID MAX 65 A Applications Desktop CPU Power DC−DC Converters High and Low Side Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJC) Limited by Die Continuous Drain Current (RqJC) Limited by Wire Power Dissipation (RqJC) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 85°C TC = 25°C ID Symbol VDSS VGS ID Value 25 "20 65 45 32 A Unit V V A G S 4 4 1 2 3 1 1 2 3 CASE 369D DPAK (Straight Lead) STYLE 2 2 3 4 TC = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C PD ID PD ID PD IDM TJ, Tstg dv/dt IS EAS 50 11.4 8.9 1.88 9.5 7.4 1.3 130 −55 to 175 2.0 2.1 71.7 W A W A W A °C V/ns mJ CASE 369AA DPAK (Bend Lead) STYLE 2 CASE 369AC 3 IPAK (Straight Lead) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 65 N03G 3 Source 1 Gate 3 Source 2 Drain = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD65N03R/D 4 Drain YWW 65 N03G 1 Gate 2 Drain Y WW 65N03 G tp = 10 ms Operating Junction and Storage Temperature Drain−to−Source (dv/dt) Source Curre...