T431616C

tm TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and self refresh 32ms refresh period (2K cycle) MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) Available package type : - 50 pin TSOP(II)/lead-free Operating temperature : - 0 ~ +70 °C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications. ORDERING INFORMATION PART NO. CLOCK CYCLE TIME 6ns 6ns 7ns 7ns MAX FREQUENCY PACKAGE TSOP-II TSOP-II Lead-free TSOP-II TSOP-II Lead-free OPERATING TEMPERATURE T431616C-6S T431616C-6SG T431616C-7S T431616C-7SG 166 MHz 166 MHz 143 MHz 143 MHz 0 ~ +70 °C 0 ~ +70 °C 0 ~ +70 °C 0 ~ +70 °C TM Technology Inc. reserves the right P. 1 to change pro...