Driver Amplifier. TGA4046 Datasheet


TGA4046 Amplifier. Datasheet pdf. Equivalent


Part Number

TGA4046

Description

Q-Band Driver Amplifier

Manufacture

TriQuint Semiconductor

Total Page 9 Pages
Datasheet
Download TGA4046 Datasheet


TGA4046
Advance Product Information
February 10, 2006
2W Q-Band High Power Amplifier
TGA4046
Key Features
• Typical Frequency Range: 41 - 46 GHz
• Typical 33dBm Psat, 32dBm P1dB
• 17 dB Nominal Gain
• 16 dB Nominal Return Loss
• Bias: 6 V, 2 A
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 3.45 x 4.39 x 0.10 mm
(0.136 x 0.173 x 0.004 in)
Primary Applications
• Sat - Com
Product Description
The TriQuint TGA4046 is a compact High Power
Amplifierwww.DataSheet4U.com MMIC for Q-band applications. The part
is designed using TriQuint’s 0.15um gate power
pHEMT process.
The TGA4046 nominally provides 33dBm of
Saturated Output Power, and 32dBm Output
Power at 1dB gain compression from 41 - 46GHz.
The MMIC also provides 17dB Gain and 16dB
Return Loss.
The part is ideally suited for markets such as
Satellite Communications both commercial and
military.
The TGA4046 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2 A
20
15 GAIN
10
5
0
-5
-10
-15
IRL ORL
-20
-25
-30
40 41 42 43 44 45 46 47 48
Frequency (GHz)
35
34 Psat
33
32
31
P1dB
30
29
28
27
26
25
40 41 42 43 44 45 46 47 48
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without
notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TGA4046
Advance Product Information
February 10, 2006
TGA4046
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
6.5 V
-2 TO 0 V
3A
112 mA
29 dBm
16 W
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of 700C, the median life is
1E+6 hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Features Advance Product Information February 10, 2006 2W Q-Band High Power Amplifier K ey Features • • • • • • • TGA4046 Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A 0.15 um 3MI pHEMT Technology Chip Dimensions 3.45 x 4.39 x 0.10 mm (0.136 x 0.173 x 0.004 in) P rimary Applications • Sat - Com Prod uct Description The TriQuint TGA4046 is a compact High Power www.DataSheet4U.c om Amplifier MMIC for Q-band applicatio ns. The part is designed using TriQuint ’s 0.15um gate power pHEMT process. T he TGA4046 nominally provides 33dBm of Saturated Output Power, and 32dBm Outpu t Power at 1dB gain compression from 41 - 46GHz. The MMIC also provides 17dB G ain and 16dB Return Loss. The part is i deally suited for markets such as Satel lite Communications both commercial and military. The TGA4046 is 100% DC and R F tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant. Power (dBm) Measured Fixtured Data Bias .
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