TGA4502-SCC Power Amplifier Datasheet

TGA4502-SCC Datasheet, PDF, Equivalent


Part Number

TGA4502-SCC

Description

K Band High Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 11 Pages
Datasheet
Download TGA4502-SCC Datasheet


TGA4502-SCC
K Band High Power Amplifier
Product Data Sheet
July 22, 2003
TGA4502-SCC
Key Features
• 17-27 GHz Application Frequency Range
• 22 dB Nominal Gain
• 29 dBm Nominal P1dB
• 37dBm Nominal OTOI
• 15 dB Nominal Return Loss
• 0.25 um pHEMT 2MI Technology
• Bias 7V @ 760 mA
• Chip Dimensions 1.52 x 3.29 x .1mm
Product Description
The TriQuint TGA4502-SCC is a compact
High Power Amplifier MMIC for K-band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
power pHEMT production process.
Thewww.DataSheet4U.com TGA4502-SCC provides a nominal
29 dBm of output power at 1 dB gain
compression from 17-27 GHz with a small
signal gain of 22 dB.
The part is ideally suited for low cost
emerging markets such as K-band
Satellite Communications, Point-to-Point
Radio, and Point-to-Multi Point
Communications.
The TGA4502-SCC is 100% DC and RF
tested on-wafer to ensure performance
compliance.
Primary Applications
• K Band Sat-Com
• Point-to-Point Radio
• Point-to-Multipoint Communications
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Id = 760mA
35
33 Psat
31
29
27 P1dB
25
23
21
17 18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
30
G a in
24
30
24
18 18
12 12
66
0 Output
0
-6 -6
-12 -12
-18 -18
-24 Inpu t
-30 t
-24
-30
14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

TGA4502-SCC
TABLE I
MAXIMUM RATINGS 1/
Product Data Sheet
July 22, 2003
TGA4502-SCC
SYMBOL
PARAMETER
V+ Positive Supply Voltage
V - Negative Supply Voltage Range
I+ Positive Supply Current
| IG | Gate Supply Current
PIN Input Continuous Wave Power
PD Power Dissipation
TCH Operating Channel Temperature
TM Mounting Temperature (30 Seconds)
TSTG Storage Temperature
VALUE
8V
-5V TO 0V
880 mA
28 mA
26 dBm
5.3 W
150 °C
320 °C
-65 to 150 °C
NOTES
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Under RF drive, the supply current may rise to
1100 mA without damage. Combinations of supply voltage, supply current, input power, and
output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is
1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
5/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com


Features Product Data Sheet July 22, 2003 K Band High Power Amplifier Key Features • • • • • • • • TGA4502-SC C 17-27 GHz Application Frequency Range 22 dB Nominal Gain 29 dBm Nominal P1dB 37dBm Nominal OTOI 15 dB Nominal Retur n Loss 0.25 um pHEMT 2MI Technology Bia s 7V @ 760 mA Chip Dimensions 1.52 x 3. 29 x .1mm Product Description The TriQ uint TGA4502-SCC is a compact High Powe r Amplifier MMIC for K-band application s. The part is designed using TriQuint s proven standard 0.25 um gate power pHEMT production process. www.DataSheet 4U.com Primary Applications • • K Band Sat-Com Point-to-Point Radio P oint-to-Multipoint Communications The TGA4502-SCC provides a nominal 29 dBm o f output power at 1 dB gain compression from 17-27 GHz with a small signal gai n of 22 dB. The part is ideally suited for low cost emerging markets such as K -band Satellite Communications, Point-t o-Point Radio, and Point-to-Multi Point Communications. The TGA4502-SCC is 100% DC and RF tested on-wafer to ensure performanc.
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