TGA4505 Band HPA Datasheet

TGA4505 Datasheet, PDF, Equivalent


Part Number

TGA4505

Description

Ka Band HPA

Manufacture

TriQuint Semiconductor

Total Page 9 Pages
Datasheet
Download TGA4505 Datasheet


TGA4505
4 Watt Ka Band HPA
Product Description
www.DataSheet4U.com
The TriQuint TGA4505 is a compact 4
Watt High Power Amplifier MMIC for Ka-
band applications. The part is designed
using TriQuint’s proven standard 0.25 um
gate Power pHEMT production process.
The TGA4505 provides a nominal 35.5
dBm of output power at 1 dB gain
compression from 24-32 GHz with a small
signal gain of 23 dB.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals
and point to point radio.
The TGA4505 is 100% DC and RF tested
on-wafer to ensure performance
compliance.
Lead-free and RoHS compliant.
Advance Product Information
July 22, 2005
TGA4505
Key Features
• Frequency Range: 24-31 GHz
• 23 dB Nominal Gain
• 35.5 dBm Nominal P1dB @30 GHz
• 36.0 dBm Nominal Psat @30 GHz
• 40 dBc at SCL Pout 20dBm
• 0.25 um pHEMT 2MI Technology
• Bias 6 V @ 2.1 A Idq
• Chip size 4.29 x 3.02 x .05 mm
(0.169 x 0.119 x 0.002 in)
Primary Applications
• Satellite Ground Terminal
• Point-to-Point Radio
Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 2.1A
30
25 Gain
36
30
20 24
15 18
10 Input
5
12
6
00
-5 -6
-10 -12
-15 -18
-20 Output
-24
-25 -30
20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
38
37
Psat
36
35
P1dB
34
33
32
31
30
26 27 28 29 30 31 32
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

TGA4505
Advance Product Information
July 22, 2005
TABLE I
MAXIMUM RATINGS
TGA4505
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current:
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
8V
-5V TO 0V
4A
62 mA
24 dBm
17.2 W
150 0C
320 0C
-65 to 150 0C
Notes
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the
median life is 1E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
5/ These ratings apply to each individual FET.
TABLE II
DC PROBE TEST
(TA = 25 qC, nominal)
NOTES
SYMBOL
1/
1/
1/, 2/
1/, 2/
1/, 2/
IDSS(Q35)
GM (Q35)
|VP(Q1, Q9, Q35)|
|VBVGS(Q35)|
|VBVGD(Q35)|
LIMITS
MIN
15
33
0.5
11
11
MAX
70.5
79.5
1.5
30
30
1/ Q35 is a 150 um Test FET
2/ VP, VBVGD, and VBVGS are negative.
UNITS
mA
mS
V
V
V
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com


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