TGA4506 Noise Amplifier Datasheet

TGA4506 Datasheet, PDF, Equivalent


Part Number

TGA4506

Description

K Band Low Noise Amplifier

Manufacture

TriQuint Semiconductor

Total Page 9 Pages
Datasheet
Download TGA4506 Datasheet


TGA4506
Advance Product Information
July 19, 2005
K Band Low Noise Amplifier
TGA4506
Key Features
• Typical Frequency Range: 20 - 27 GHz
• 21 dB Nominal Gain
• 2.2 dB Nominal Noise Figure
• 12 dBm Nominal P1dB
• Bias 3.5 V, 60 mA
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 1.2 x 0.8 x 0.1 mm
(0.047 x 0.031 x 0.004) in
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
30
Gain
20
10
www.DataSheet4U.com
0
-10
-20
ORL
-30
IRL
-40
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20 21 22 23 24 25 26 27
Frequency (GHz)
Primary Applications
• Point-to-Point Radio
• Point-to-MultiPoint Radio
• LMDS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications.
Specifications are subject to change without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TGA4506
Advance Product Information
July 19, 2005
TGA4506
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
5V
-1 TO +0.5 V
190 mA
6 mA
TBD
TBD
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Features Advance Product Information July 19, 200 5 K Band Low Noise Amplifier Key Featu res • • • • • • • TGA450 6 Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Nois e Figure 12 dBm Nominal P1dB Bias 3.5 V , 60 mA 0.15 um 3MI pHEMT Technology Ch ip Dimensions 1.2 x 0.8 x 0.1 mm (0.047 x 0.031 x 0.004) in Preliminary Measu red Data Bias Conditions: Vd = 3.5 V, I d = 60 mA 30 Gain & Return Loss (dB) 20 10 0 -10 -20 -30 -40 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) Primar y Applications • Point-to-Point Radio Point-to-MultiPoint Radio LMDS • • Gain www.DataSheet4U.com ORL IRL 3.0 2.5 Noise Figure 2.0 1.5 1.0 0.5 0. 0 20 21 22 23 24 25 26 27 Frequency (G Hz) Note: Devices designated as EPU ar e typically early in their characteriza tion process prior to finalizing all el ectrical and process specifications. Sp ecifications are subject to change with out notice TriQuint Semiconductor Texa s: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint..
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