Noise Amplifier. TGA4508 Datasheet


TGA4508 Amplifier. Datasheet pdf. Equivalent


Part Number

TGA4508

Description

Ka Band Low Noise Amplifier

Manufacture

TriQuint Semiconductor

Total Page 10 Pages
Datasheet
Download TGA4508 Datasheet


TGA4508
Advance Product Information
July 19, 2005
Ka Band Low Noise Amplifier
TGA4508
Key Features
• Typical Frequency Range: 30 - 42 GHz
• 21 dB Nominal Gain
• 2.8 dB Nominal Noise Figure
• 14 dBm Nominal P1dB @ 38 GHz
• Bias 3 V, 40mA
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 1.7 x 0.8 x 0.1 mm
(0.067 x 0.031 x 0.004) in
Preliminary Measured Data
Bias Conditions: Vd = 3 V, Id = 40 mA
40
30
Gain
20
Primary Applications
• Point-to-Point Radio
• Point-to-MultiPoint Radio
• Ka Band VSAT
10
www.DataSheet4U.com
0
-10
IRL
-20 ORL
-30
-40
25 27 29 31 33 35 37 39 41 43 45
Frequency (GHz)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications.
Specifications are subject to change without notice
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

TGA4508
Advance Product Information
July 19, 2005
TGA4508
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
V+ Positive Supply Voltage
Vg1 Gate 1 Supply Voltage Range
I+ Positive Supply Current
| IG | Gate Supply Current
PIN Input Continuous Wave Power
PD Power Dissipation
TCH Operating Channel Temperature
TM Mounting Temperature (30 Seconds)
TSTG Storage Temperature
VALUE
5V
-1 V TO 0 V
190 mA
6 mA
12 dBm
0.37 W
117 °C
320 °C
-65 to 117 °C
NOTES
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median
life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/ These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(Ta = 25 0C, Nominal)
SYMBOL
PARAMETER
VBVGS3
Breakdown Voltage gate-
source
VBVGD3
Breakdown Voltage gate-
drain
VP1,2,3
Pinch-off Voltage
MINIMUM MAXIMUM UNITS
-30 -5 V
-30 -5 V
-1.0 -0.1 V
Q1 is 100 um FET, Q2 is 200 um FET, Q3 is 300 um FET
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com


Features Advance Product Information July 19, 200 5 Ka Band Low Noise Amplifier Key Feat ures • • • • • • • TGA45 08 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain 2.8 dB Nominal Nois e Figure 14 dBm Nominal P1dB @ 38 GHz B ias 3 V, 40mA 0.15 um 3MI pHEMT Technol ogy Chip Dimensions 1.7 x 0.8 x 0.1 mm (0.067 x 0.031 x 0.004) in Preliminary Measured Data Bias Conditions: Vd = 3 V, Id = 40 mA Primary Applications • Point-to-Point Radio Point-to-MultiPoi nt Radio Ka Band VSAT • 40 Ga in & R etu rn L o ss (d B ) 30 20 10 0 -10 -2 0 -30 -40 25 27 29 31 33 35 37 39 41 43 45 Frequency (GHz) 5.0 4.5 N o is e F ig u r e (d B ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 30 31 32 33 34 35 36 37 38 39 40 Gain • www.DataSheet4U.com IRL ORL Frequency (GHz) Note: Devices designa ted as EPU are typically early in their characterization process prior to fina lizing all electrical and process speci fications. Specifications are subject t o change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (.
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