TGA4509-EPU Power Amplifier Datasheet

TGA4509-EPU Datasheet, PDF, Equivalent


Part Number

TGA4509-EPU

Description

1W Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 8 Pages
Datasheet
Download TGA4509-EPU Datasheet


TGA4509-EPU
Advance Product Information
Jan 17, 2005
27 - 31 GHz 1W Power Amplifier
TGA4509-EPU
Key Features
• 22 dB Nominal Gain @ 30 GHz
• 30 dBm Nominal Pout @ P1dB
• 25% PAE @ P1dB
• -10 dB Nominal Return Loss
• Built-in Power Detector
• 0.25-µm mmW pHEMT 3MI
• Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA
• Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm
(0.096 x 0.045 x 0.004 in)
Primary Applications
• Point to Point Radio
• Point to Multi-point Radio
• LMDS
• Satellite Ground Terminal
www.DataSheet4U.com
Data taken
@ 30 GHz
Fixtured Measured Performance
Bias Conditions: Vd = 6 V, Id =420 mA
30
25
20
15 S21
10
5
0
-5
-10
-15
S22
-20
S11
-25
-30
25 26 27 28 29 30 31 32 33
Frequency (GHz)
32
30
28
26
24 Pout
22
20 Gain
18
16 IDS
14
12
10
-12 -9 -6 -3 0 3 6 9 12 15 18
Pin (dBm)
34
1000
800
600
400
200
0
21
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

TGA4509-EPU
Advance Product Information
Jan 17, 2005
TGA4509-EPU
TABLE I
MAXIMUM RATINGS 1/
Symbol
V+
V-
|Ig|
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Negative Supply Voltage Range
Gate Current
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
7V
-5 V to 0 V
35.2 mA
930 mA
TBD
22 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
2/, 5/
3/, 4/
1/ These values represent the maximum operable values of this device
2/ Total current for the entire MMIC
3/ These ratings apply to each individual FET
4/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
5/ The maximum supply current from one side is 650 mA. From both sides, the
maximum supply current is 930 mA.
TABLE II
ELECTRICAL CHARACTERISTICS
(TA = 25oC, Nominal)
Parameter
Drain Operating Voltage
Quiescent Current
Small Signal Gain @ 30 GHz
Gain Flatness
Input Return Loss (Linear Small Signal)
Output Return Loss (Linear Small Signal)
Reverse Isolation
CW Output Power @ P1dB
Power Added Efficiency @ P1dB
P1dB temperature coeff. TC (-40 to +85 °C)
Units
V
mA
dB
dB/50MHz
dB
dB
dB
dBm
%
dB/deg C
Typical
6
420
22
0.0660
-10
-10
-40
30
25
0.0135
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2


Features Advance Product Information Jan 17, 2005 27 - 31 GHz 1W Power Amplifier Key Fe atures • • • • • • • • TGA4509-EPU 22 dB Nominal Gain @ 30 G Hz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built- in Power Detector 0.25-µm mmW pHEMT 3M I Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA Chip Dimensions 2.44 mm x 1.15 m m x 0.1 mm (0.096 x 0.045 x 0.004 in) Primary Applications • • • • Po int to Point Radio Point to Multi-point Radio LMDS Satellite Ground Terminal www.DataSheet4U.com Fixtured Measured Performance 30 25 20 15 10 S 21 Bias C onditions: Vd = 6 V, Id =420 mA Sij (d B) 5 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 25 32 30 1000 S22 S 11 26 27 28 29 30 31 32 33 34 F re q u e n c y (G H z ) Pout (dBm) & Gain (dB) 28 26 24 22 20 18 16 14 12 10 -12 -9 -6 -3 0 3 6 9 12 15 18 21 0 800 600 Gain 400 ID S 200 Pin (dBm ) Note: Devices design ated as EPU are typically early in thei r characterization process prior to finalizing all electrical and process specifications.
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