TGA4510-EPU Driver Amplifier Datasheet

TGA4510-EPU Datasheet, PDF, Equivalent


Part Number

TGA4510-EPU

Description

Ka-band Compact Driver Amplifier

Manufacture

TriQuint Semiconductor

Total Page 9 Pages
Datasheet
Download TGA4510-EPU Datasheet


TGA4510-EPU
Advance Product Information
August 5, 2002
29-37 GHz Compact Driver Amplifier
TGA4510-EPU
Key Features
• 0.25 um pHEMT Technology
• >16 dB Nominal Gain @ 30 GHz
• 16 dBm Nominal Psat
• Bias Conditions: Vd = 6V, Id = 60 mA
• Compact Chip Size: 1.1 x 0.8 x 0.1 mm3
Primary Applications
• LMDS
Fixtured Measured Performance
www.DataSheet4U.com
20
18
16
14
12
10
8
6
4
2
0
26
Bias Conditions: Vd = 6V, Id = 60 mA ± 5%
28 30 32 34 36 38
Frequency (GHz)
40
Point-to-Point
Base Stations
,
20
18
Pwr(in)
16
14 4
2
12 0
-2
10 -4
8 -6
-8
6 -10
4
2
0
26 28 30 32 34 36 38 40
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

TGA4510-EPU
Advance Product Information
August 5, 2002
TABLE I
MAXIMUM RATINGS 1/
TGA4510-EPU
Symbol
V+
I+
|IG|
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
(Quiescent)
Gate Current
Power Dissipation
Input Continuous Wave Power
Operating Channel
Temperature
Mounting Temperature (30
seconds)
Storage Temperature
Value
8V
81mA
3.5 mA
TBD
18 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
2/
3/, 4/
1/ These values represent the maximum operable values of this device
2/ Total current for the entire MMIC
3/ These ratings apply to each individual FET
4/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25oC ± 5oC)
Parameter
Frequency Band
Drain Operating Voltage
Gate Operating Voltage
Drain Current, Quiescent
Typical DC Power Consumption
Small Signal Gain
Gain Flatness
Input Return Loss
Output Return Loss
TOI (Single Tone Power) @ 30 GHz
CW Output Power @ P1dB (dBm)
Units
GHz
V
V
mA
W
dB
dB
dB
dB
dBm
dBm
Typical
29 - 37
6
-0.6
60
0.36
15.8 – 17.6
< 0.05
>8
> 11
22
14.0 – 16.2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2


Features Advance Product Information August 5, 20 02 29-37 GHz Compact Driver Amplifier Key Features • • • • • TGA45 10-EPU 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal P sat Bias Conditions: Vd = 6V, Id = 60 m A Compact Chip Size: 1.1 x 0.8 x 0.1 mm 3 Primary Applications • LMDS Point- to-Point Base Stations Fixtured Measur ed Performance Bias Conditions: Vd = 6V , Id = 60 mA ± 5% 20 18 16 www.DataShe et4U.com • • 14 12 10 8 6 4 2 0 2 6 28 30 32 34 Frequency (GHz) 36 38 40 Gain (dB) 20 18 16 14 Pout (dBm) 12 1 0 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 - 2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Devices designated as EPU are typically early in their chara cterization process prior to finalizing all electrical and process specificati ons. Specifications are subject to chan ge without notice. TriQuint Semiconduc tor Texas: Phone (972)994-8465 Fax (972 )994 8504 Web: www.triquint.com 1 Adv ance Product Information TABLE I MAXIMUM RATINGS 1/ Symbol Parameter + V Positiv.
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