TGA4516

Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier Key Features TGA4516 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in Military Radar Systems Ka-Band Sat-Com Point to Point Radio Primary Applications Product Description The TriQuint TGA4516 is a High Power MMIC Amplifier for Ka-band applications. The part is designed using TriQuint’s 0.15um power pHEMT process. The small chip size is achieved by utilizing TriQuint’s 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products. The TGA4516 provides >33 dBm saturated output power, and has typical gain of 18 dB at a bias of 6V and 1050mA (Idq). The current rises to 1.9A under RF drive. This HPA is ideally suited for many applications such as Military Radar Systems, Ka-band Sat-Com, and Point-to-Point Radios. The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. Preliminary Fixtured Data VD = 6V, ID = 1050mA 25 20 15 10 S-Parameters (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 30 32 34 36 38 40 Frequency (GHz) S22 S11 S21 www.DataSheet4U.com Pout @ Pin =20dBm 35 34 Pout (dBm) 33 32 31 30 30 32 34 36 38 40 Frequency (GHz) Note: This Devices is early in the characterization process prior to finalizing all electrical specifications. Specificat...