TGA4516 Power Amplifier Datasheet

TGA4516 Datasheet, PDF, Equivalent


Part Number

TGA4516

Description

Ka-Band 2W Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 8 Pages
Datasheet
Download TGA4516 Datasheet


TGA4516
Ka-Band 2W Power Amplifier
Advance Product Information
December 2, 2004
TGA4516
Key Features
• 30 - 40 GHz Bandwidth
• > 33 dBm Nominal Psat @ Pin = 20dBm
• 18 dB Nominal Gain
• Bias: 6 V, 1050 mA Idq
(1.9A under RF Drive)
• 0.15 um 3MI MMW pHEMT Technology
• Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in
Product Description
The TriQuint TGA4516 is a High Power MMIC
Amplifier for Ka-band applications. The part
www.DataSheet4U.com
is designed using TriQuint’s 0.15um power
pHEMT process. The small chip size is
achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that
allows compaction of the design over
competing products.
The TGA4516 provides >33 dBm saturated
output power, and has typical gain of 18 dB at
a bias of 6V and 1050mA (Idq). The current
rises to 1.9A under RF drive.
This HPA is ideally suited for many
applications such as Military Radar Systems,
Ka-band Sat-Com, and Point-to-Point
Radios.
Primary Applications
• Military Radar Systems
• Ka-Band Sat-Com
• Point to Point Radio
Preliminary Fixtured Data
VD = 6V, ID = 1050mA
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
30
S21
S22
S11
32 34 36 38
Frequency (GHz)
40
Pout @ Pin =20dBm
35
34
33
32
The TGA4516 is 100% DC and RF tested
on-wafer to ensure performance compliance.
31
30
30 32 34 36 38 40
Frequency (GHz)
Note: This Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1

TGA4516
Advance Product Information
December 2, 2004
TGA4516
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
V+
V-
I+
I G
P IN
PD
TCH
TM
TSTG
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5 TO 0 V
3A
85 mA
267 mW
7.8 W
150 oC
320 oC
-65 to 150 oC
NOTES
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of 70 oC, the median life
is 1E6 hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
6/ These ratings apply to each individual FET.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2


Features Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier Key Fe atures • • • • • • TGA4516 30 - 40 GHz Bandwidth > 33 dBm Nomina l Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in Military Ra dar Systems Ka-Band Sat-Com Point to Po int Radio Primary Applications • • • Product Description The TriQuint T GA4516 is a High Power MMIC Amplifier f or Ka-band applications. The part is de signed using TriQuint’s 0.15um power pHEMT process. The small chip size is a chieved by utilizing TriQuint’s 3 met al layer interconnect (3MI) design tech nology that allows compaction of the de sign over competing products. The TGA45 16 provides >33 dBm saturated output po wer, and has typical gain of 18 dB at a bias of 6V and 1050mA (Idq). The curre nt rises to 1.9A under RF drive. This H PA is ideally suited for many applications such as Military Radar Systems, Ka-band Sa.
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