TGA4517-EPU Power Amplifier Datasheet

TGA4517-EPU Datasheet, PDF, Equivalent


Part Number

TGA4517-EPU

Description

Ka-Band Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 10 Pages
Datasheet
Download TGA4517-EPU Datasheet


TGA4517-EPU
Ka-Band Power Amplifier
Advance Product Information
June 4, 2004
TGA4517-EPU
Key Features
• Frequency Range: 31 - 37 GHz
• 35 dBm Nominal Psat
• 15 dB Nominal Gain
• 12 dB Nominal Return Loss
• Bias 5-6 V, 2 A Quiescent
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 4.35 x 3.90 x 0.05 mm
(0.171 x 0.154 x 0.002) in
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Idq = 2 A
25
20 GAIN
15
10
www.DataSheet4U.com
5
0
-5 ORL
-10
-15 IRL
-20
-25
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Primary Applications
• Point-to-Point Radio
• Military Radar Systems
• Ka-Band Sat-Com
Bias Conditions: Vd = 6 V, Idq = 2 A, Duty = 20%
@ Pin = 24 dBm
38
36
34
32
30
28
26
32 33 34 35 36 37 38
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1

TGA4517-EPU
Advance Product Information
June 4, 2004
TGA4517-EPU
TABLE I
ABSOLUTE MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current (Under RF Drive)
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
8V
-3 TO 0 V
4A
141 mA
TBD
18.3 W
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 0C, the
median life is 1E+6 hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(Ta = 25 0C, Nominal)
SYMBOL
PARAMETER
VBVGD,Q1-Q2 Breakdown Voltage Gate-Drain
VBVGD,Q15-Q30 Breakdown Voltage Gate-Drain
VP,Q15-Q30
Pinch-Off Voltage
Each FET Cell is 750um
MIN.
-30
-30
-1.5
TYP.
-14
-14
-1
MAX.
-11
-11
-0.5
UNITS
V
V
V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2


Features Advance Product Information June 4, 2004 Ka-Band Power Amplifier Key Features • • • • • • • TGA4517-EP U Frequency Range: 31 - 37 GHz 35 dBm N ominal Psat 15 dB Nominal Gain 12 dB No minal Return Loss Bias 5-6 V, 2 A Quies cent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm (0.171 x 0.154 x 0.002) in Preliminary Measu red Data Bias Conditions: Vd = 6 V, Idq = 2 A 25 20 15 10 5 0 -5 -10 -15 -20 - 25 Frequency (GHz) Primary Application s • • • Point-to-Point Radio Mili tary Radar Systems Ka-Band Sat-Com GAI N www.DataSheet4U.com S-Parameter (dB ) ORL IRL 30 31 32 33 34 35 36 37 38 39 40 Bias Conditions: Vd = 6 V, Idq = 2 A, Duty = 20% @ Pin = 24 dBm 38 36 P sat (dBm) 34 32 30 28 26 32 33 34 35 36 37 38 Frequency (GHz) Note: Devices de signated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subj ect to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax.
Keywords TGA4517-EPU, datasheet, pdf, TriQuint Semiconductor, Ka-Band, Power, Amplifier, GA4517-EPU, A4517-EPU, 4517-EPU, TGA4517-EP, TGA4517-E, TGA4517-, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)