TGA4517-EPU

Advance Product Information June 4, 2004 Ka-Band Power Amplifier Key Features TGA4517-EPU Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat 15 dB Nominal Gain 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm (0.171 x 0.154 x 0.002) in Preliminary Measured Data Bias Conditions: Vd = 6 V, Idq = 2 A 25 20 15 10 5 0 -5 -10 -15 -20 -25 Frequency (GHz) Primary Applications Point-to-Point Radio Military Radar Systems Ka-Band Sat-Com GAIN www.DataSheet4U.com S-Parameter (dB) ORL IRL 30 31 32 33 34 35 36 37 38 39 40 Bias Conditions: Vd = 6 V, Idq = 2 A, Duty = 20% @ Pin = 24 dBm 38 36 Psat (dBm) 34 32 30 28 26 32 33 34 35 36 37 38 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 1 Advance Product Information June 4, 2004 TGA4517-EPU TABLE I ABSOLUTE MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD T CH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current (Under RF Drive) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 8V -3 TO 0 V 4A 141 mA TBD 18.3 W 150 C 320 C -65 to 150 C 0 0 0 N...