Advance Product Information
January 17, 2005
33 - 47 GHz Wide Band Driver Amplifier
Key Features
• • • • • • • • •
TGA4522-EPU
Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 35 dBm OTOI @ Pin = 18 dBm/Tone 14 dB Nominal Gain @ 38GHz 14 dB Nominal Return Loss @ 38GHz Bias: 6 V @ 400 mA Idq 0.25 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in)
Primary Applications
• • • •
www.DataSheet4U.com
Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM
Product Description
The TriQuint TGA4522-EPU is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s proven standard 0.25um power pHEMT production process. The TGA4522-EPU nominally provides 27 dBm saturated output power, and 26 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 14 dB, and return loss of 12 dB. The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications.
30 Output Power (dBm)
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
20 15 10 5 0 -5 -10 -15 -20 -25 -30 32 34
Gain
S-parameter (dB)
IRL ORL
36 38 40 42 44 46 48
Frequency (GHz)
The TGA4522-EPU is 100% DC and RF tested onwafer to ensure performance compliance.
28 26 24 22 20 18 32 34 36 38 40 42 44 46 48 Frequency (GHz)
Psat P1dB
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
PARAMETER
Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE
8V -2 TO 0 V 700 mA 16 mA 23 dBm See note 4/ 150 C 320 C -65 to 150 0C
0 0
NOTES
2/
2/ 3/ 3/
2/ 5/ 6/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C – TBASE 0C) / 35.5 (0C/W) Where TBASE is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
6/
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
PARAMETER
Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1dB Gain Compression, P1dB Saturated Power, Psat
TYPICAL
33 - 47 6.0 400 -0.5 13 14 18 26 27
UNITS
GHz V mA V dB dB dB dBm dBm
TABLE III THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 5 V Id = 400 mA Pdiss = 2.0 W TCH O ( C) 140 RTJC (qC/W) 35.5 TM (HRS) 2.4E+6
RθJC Thermal Resistance (channel to Case)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 50 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
Preliminary Measured Data
20 18 16 14 Gain (dB) 12 10
Bias Conditions: Vd = 5-6 V, Idq = 400 mA
5V
6V
8 6 4 2 0 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) 20 15 10 5
Bias Conditions: Vd = 6 V, Idq = 400 mA
Return Loss (dB)
0 -5 -10 -15 -20 -25 -30 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
IRL
ORL
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email:
[email protected] Web: www.triquint.com
Advance Product Information
January 17, 20.