TGA4522-EPU Driver Amplifier Datasheet

TGA4522-EPU Datasheet, PDF, Equivalent


Part Number

TGA4522-EPU

Description

Wide Band Driver Amplifier

Manufacture

TriQuint Semiconductor

Total Page 10 Pages
Datasheet
Download TGA4522-EPU Datasheet


TGA4522-EPU
Advance Product Information
January 17, 2005
33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU
Key Features
• Frequency Range: 33 - 47 GHz
• 27 dBm Nominal Psat @ 38GHz
• 26 dBm P1dB @ 38 GHz
• 35 dBm OTOI @ Pin = 18 dBm/Tone
• 14 dB Nominal Gain @ 38GHz
• 14 dB Nominal Return Loss @ 38GHz
• Bias: 6 V @ 400 mA Idq
• 0.25 um 3MI pHEMT Technology
• Chip Dimensions 2.00 x 1.45 x 0.10 mm
(0.079 x 0.057 x 0.004 in)
Primary Applications
• Digital Radio
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Military SAT-COM
Product Description
www.DataSheet4U.com
The TriQuint TGA4522-EPU is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint’s
proven standard 0.25um power pHEMT production
process.
The TGA4522-EPU nominally provides 27 dBm
saturated output power, and 26 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 14 dB, and return loss of 12 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4522-EPU is 100% DC and RF tested on-
wafer to ensure performance compliance.
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
20 Gain
15
10
5
0
-5
-10 IRL
-15
-20 ORL
-25
-30
32 34 36 38 40 42 44 46 48
Frequency (GHz)
30
28
26 Psat
24 P1dB
22
20
18
32 34 36 38 40 42 44 46 48
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications.
Specifications are subject to change without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TGA4522-EPU
Advance Product Information
January 17, 2005
TGA4522-EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
Ig
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
8V
-2 TO 0 V
700 mA
16 mA
23 dBm
See note 4/
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 0C – TBASE 0C) / 35.5 (0C/W)
Where TBASE is the base plate temperature.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications.
Specifications are subject to change without notice
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Features Advance Product Information January 17, 2005 33 - 47 GHz Wide Band Driver Ampl ifier Key Features • • • • • • • • • TGA4522-EPU Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 35 dBm OT OI @ Pin = 18 dBm/Tone 14 dB Nominal Ga in @ 38GHz 14 dB Nominal Return Loss @ 38GHz Bias: 6 V @ 400 mA Idq 0.25 um 3M I pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.00 4 in) Primary Applications • • • • www.DataSheet4U.com Digital Radio Point-to-Point Radio Point-to-Multipoi nt Communications Military SAT-COM Pro duct Description The TriQuint TGA4522-E PU is a compact Driver Amplifier MMIC f or Ka-band and Q-band applications. The part is designed using TriQuint’s pr oven standard 0.25um power pHEMT produc tion process. The TGA4522-EPU nominally provides 27 dBm saturated output power , and 26 dBm output power at 1dB Gain c ompression @ 38 GHz. It also has typica l gain of 14 dB, and return loss of 12 dB. The part is ideally suited for low cost emerging.
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