TGA4530 Power Amplifier Datasheet

TGA4530 Datasheet, PDF, Equivalent


Part Number

TGA4530

Description

K Band High Linearity Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 12 Pages
Datasheet
Download TGA4530 Datasheet


TGA4530
Product Data Sheet
March 5, 2007
K Band High Linearity Power Amplifier
TGA4530
Key Features
Frequency Range: 17 - 21 GHz
20 dB Gain
30 dBm nominal P1dB
42dBm nominal OTOI
20 dB Return Loss
Bias 5 - 7 V @ 825 mA
0.25 um 3MI pHEMT technology
Chip Dimensions 2.43 x 1.45 x .1mm
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 825mA
25
20
15
10
5
0www.DataSheet4U.com
-5
-10
-15
-20
-25
-30
-35
Gain
IRL
ORL
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
44
42
40
38 OTOI @ 20dBm/Tone
36 P1dB
34
32
30
28
26
24
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
Primary Applications
Point-to-Point Radio
K Band Sat-Com
Product Description
The TriQuint TGA4530 is a High Power Amplifier
MMIC for 17 – 21GHz applications. The part is
designed using TriQuint’s 0.25um 3MI pHEMT
production process.
The TGA4530 nominally provides 30dBm output
power @ 1dB gain compression and 42dBm OTOI
at a bias of 7V and 825mA. The typical gain is 20dB.
The part is ideally suited for low cost emerging
markets such as Point-to-Point Radio, and K-band
Satellite Communications.
The TGA4530 is 100% DC and RF tested on-wafer to
ensure performance compliance.
The TGA4530 has a protective surface passivation
layer providing environmental robustness.
Lead-Free & RoHS compliant
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

TGA4530
Product Data Sheet
March 5, 2007
TGA4530
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
Vd Positive Supply Voltage
Vg Negative Supply Voltage Range
Id
| IG |
PIN
PD
TCH
TM
TSTG
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5V TO 0V
1.75 A
35 mA
26 dBm
5.8 W
150 °C
320 °C
-65 to 150 °C
NOTES
2/
2/
2/
2/, 3/
3/, 4/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 650C, the median life is
1.0E+6 hrs.
4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com


Features Product Data Sheet March 5, 2007 K Band High Linearity Power Amplifier Key Fea tures • • • • • • • • TGA4530 Frequency Range: 17 - 21 GHz 2 0 dB Gain 30 dBm nominal P1dB 42dBm nom inal OTOI 20 dB Return Loss Bias 5 - 7 V @ 825 mA 0.25 um 3MI pHEMT technology Chip Dimensions 2.43 x 1.45 x .1mm Me asured Fixtured Data Bias Conditions: V d = 7V, Id = 825mA 25 20 Gain 15 IRL 10 ORL 5 www.DataSheet4U.com 0 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19 .0 19.5 20.0 20.5 21.0 Sparameters (dB) Frequency (GHz) 44 42 40 OTOI @ 20dBm/ Tone 38 P1dB 36 34 32 30 28 26 24 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Frequency (GHz) Primary Applications • • Point-to-Point Radio K Band Sat -Com Product Description The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 – 21GHz applications. The part is designed using TriQuint’s 0.25um 3MI pHEMT production process. The TGA45 30 nominally provides 30dBm output powe r @ 1dB gain compression and 42dBm OTOI at a bias of 7V and 825mA. The typical gain is .
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