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TGA4530 Dataheets PDF



Part Number TGA4530
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description K Band High Linearity Power Amplifier
Datasheet TGA4530 DatasheetTGA4530 Datasheet (PDF)

Product Data Sheet March 5, 2007 K Band High Linearity Power Amplifier Key Features • • • • • • • • TGA4530 Frequency Range: 17 - 21 GHz 20 dB Gain 30 dBm nominal P1dB 42dBm nominal OTOI 20 dB Return Loss Bias 5 - 7 V @ 825 mA 0.25 um 3MI pHEMT technology Chip Dimensions 2.43 x 1.45 x .1mm Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 825mA 25 20 Gain 15 IRL 10 ORL 5 www.DataSheet4U.com 0 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Sparameters (dB) Frequen.

  TGA4530   TGA4530


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Product Data Sheet March 5, 2007 K Band High Linearity Power Amplifier Key Features • • • • • • • • TGA4530 Frequency Range: 17 - 21 GHz 20 dB Gain 30 dBm nominal P1dB 42dBm nominal OTOI 20 dB Return Loss Bias 5 - 7 V @ 825 mA 0.25 um 3MI pHEMT technology Chip Dimensions 2.43 x 1.45 x .1mm Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 825mA 25 20 Gain 15 IRL 10 ORL 5 www.DataSheet4U.com 0 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Sparameters (dB) Frequency (GHz) 44 42 40 OTOI @ 20dBm/Tone 38 P1dB 36 34 32 30 28 26 24 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Frequency (GHz) Primary Applications • • Point-to-Point Radio K Band Sat-Com Product Description The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 – 21GHz applications. The part is designed using TriQuint’s 0.25um 3MI pHEMT production process. The TGA4530 nominally provides 30dBm output power @ 1dB gain compression and 42dBm OTOI at a bias of 7V and 825mA. The typical gain is 20dB. The part is ideally suited for low cost emerging markets such as Point-to-Point Radio, and K-band Satellite Communications. The TGA4530 is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA4530 has a protective surface passivation layer providing environmental robustness. Lead-Free & RoHS compliant P1dB & OTOI (dBm) Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Product Data Sheet March 5, 2007 TGA4530 TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id | IG | PIN PD TCH TM TSTG PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V -5V TO 0V 1.75 A 35 mA 26 dBm 5.8 W 150 °C 320 °C -65 to 150 °C NOTES 2/ 2/ 2/ 2/, 3/ 3/, 4/ 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 65 C, the median life is 1.0E+6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 0 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Product Data Sheet March 5, 2007 TGA4530 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Saturated Output Power @ Pin = 16dBm, Psat Output Power @ 1dB Gain Compression, P1dB Output Third Order Intercept, OTOI @ 20dBm/Tone Small Signal Gain Temperature Coefficient Noise Figure @ 19GHz TYPICAL 17 - 21 7 825 -0.45 20 20 20 32 30 42 -0.03 6 UNITS GHz V mA V dB dB dB dBm dBm dBm dB/0C dB TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 7 V Id = 825 mA Pdiss = 5.78 W Small Signal Vd = 7 V Id = 1050 mA @ Psat Pout = 1.6 W (RF) Pdiss = 5.75 W TCH O ( C) 150 θJC (°C/W) 14.7 TM (HRS) 1.0E+6 θJC Thermal Resistance (channel to Case) θJC Thermal Resistance (channel to Case) 150 14.7 1.0E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 65 C baseplate temperature. . 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Product Data Sheet March 5, 2007 Measured Data Bias Conditions: Idq = 825 mA TGA4530 26 25 24 23 22 Gain (dB) 21 20 19 18 17 16 15 16 17 18 19 20 21 22 23 24 25 Frequency (GHz) -10 -12 -14 -16 -18 Return Loss (dB) -20 -22 -24 -26 -28 -30 -32 -34 -36 16 17 18 19 20 21 Frequency (GHz) 22 23 24 25 4 Vd = 4V - 7V 4V_825mA 5V_825mA 6V_825mA 7V_825mA Vd = 7V IRL ORL TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Product Data Sheet March 5, 2007 Measured Data Bias Conditions: Vd = 4V - 7V, Idq = 825 mA TGA4530 35 34 Saturated Power @ Pin = 16dBm (dBm) 33 32 31 30 29 28 27 26 25 16.0 35 Output Power @ 1dB Gain Compression (dBm) 34 33 32 31 30 29 28 27 26 25 16.0 Vd = 4V - 7V 7V_825mA 6V_825mA 5V_825mA 4V_825mA 16.5 17.0 17.5 18.0 18.5 19.0 Frequency (GHz) 19.5 20.0 20.5 21.0 Vd = 4V - 7V 7V_825mA 6V_825mA 5V_825mA 4V_825mA 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Frequency (GHz) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Product Data Sheet March 5, 2007 Measured Data Bias Conditions: Vd = 7V, Idq = 8.


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