Advance Product Information
February 7, 2006
4 Watt Ka Band Packaged Amplifier
• • • • • •
TGA4905-CP
36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A (Quiescent) up to 4 A under RF drive Package Dimensions: 13.34 x 9.65 x 1.85 mm (0.525 x 0.380 x 0.073 in)
Key Features and Performance
Primary Applications
Product Description
The TriQuint TGA4905-CP is a compact 4 Watt High Power Amplifier Packaged MMIC for Ka-band applications. The part is designed using TriQuint’s proven www.DataSheet4U.com standard 0.25 um gate Power pHEMT production process. The TGA4905 provides a nominal 36 dBm of output power at an input power level of 18 dBm from 25-31 GHz with a small signal gain of 22 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and LMDS.
Pout @ Pin=18dBm (dBm)
Gain (dB)
• •
Satellite Ground Terminals Point to Point
Measured Performance
30
Bias Conditions: Vd=6 V Idq=2.1 A
30
25
Gain Input RL Output RL
20
20
10
15
0
10
-10
5
-20
0 25 26 27 28 29 30 31
-30
Frequency (GHz)
40
The TGA4905-CP is 100% RF tested to ensure performance compliance.
38 36 34 32 30 28 26 24 22 20 25 26 27 28 29 30 31
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
[email protected]
1
Return Loss (dB)
Advance Product Information
February 7, 2006 TGA4905-CP TABLE I MAXIMUM RATINGS
Symbol
VD VG ID | IG | PIN PD TCH TM TSTG Drain Voltage Gate Voltage Range Drain Current (Quiescent) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Parameter 1/
Value
8V -5 V to 0 V 3.0 A 62 mA 24 dBm 16.8 W 150 C 320 C -65 to 150 C
0 0 0
Notes
2/
2/
2/ 2/ 3/ 4/ 5/
1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. PD is the power dissipation allowed in order to reach a channel temperature of 150°C with a package base temperature of 70°C. When operated at this power dissipation with a baseplate temperature of 70°C, the MTTF is 1.0E+6 hours. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ 5/
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
[email protected]
2
Advance Product Information
February 7, 2006 TGA4905-CP
TABLE II RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal) (Vd = 6 V, Idq = 2.1 A) SYMBOL
Gain
PARAMETER.