TIM3742-25UL GaAs FET Datasheet

TIM3742-25UL Datasheet, PDF, Equivalent


Part Number

TIM3742-25UL

Description

MICROWAVE POWER GaAs FET

Manufacture

Toshiba Semiconductor

Total Page 4 Pages
Datasheet
Download TIM3742-25UL Datasheet


TIM3742-25UL
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM3742-25UL
www.DataSheet4U.com
FEATURES
n HIGH POWER
P1dB=44.5dBm at 3.7GHz to 4.2GHz
n HIGH GAIN
G1dB=10.5dB at 3.7GHz to 4.2GHz
n BROADBANDINTERNALLYMATCHEDFET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
P1dB
dBm 43.5 44.5
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
G1dB
IDS1
G
ηadd
IM3
VDS= 10V
f = 3.7 to 4.2GHz
Two-Tone Test
Po=33.5dBm
dB 9.5 10.5
A 6.8 7.6
dB   ±0.6
% 38
dBc -44 -47
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 28 (MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
A
°C
6.8 7.6
  80
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 8.0A
VGSoff VDS= 3V
IDS= 80mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -280µA
UNIT MIN. TYP. MAX.
mS 5000
V -1.0 -2.5 -4.0
A 14.4
V -5  
Thermal Resistance
Rth(c-c) Channel to Case
°C/W 1.2 1.5
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006

TIM3742-25UL
TIM3742-25UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-16G1B)
RATING
15
-5
20.0
100
175
-65 to +175
4 C1.0
(2)
0.7±0.15
(1)
(2)
Unit in mm
(1) Gate
(2) Source
(3) Drain
(3)
20.4±0.3
24.5 MAX.
16.4 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2


Features MICROWAVE POWER GaAs FET MICROWAVE SEMIC ONDUCTOR TIM3742-25UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3 .7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTER NALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output P ower at 1dB Gain Compression Point Powe r Gain at 1dB Gain Compression Point Dr ain Current Gain Flatness Power Added E fficiency 3rd Order Intermodulation Dis tortion www.DataSheet4U.com SYMBOL P1d B G1dB IDS1 ∆G CONDITIONS UNIT dBm dB A dB % MIN. 43.5 9.5    -4 4   TYP. MAX. 44.5 10.5 6.8  38 -47 6.8    7.6 ±0.6  7.6 80 VDS= 10V f = 3.7 to 4.2GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po= 33.5dBm (Single Carrier Level) (VDS X I DS + Pin – P1dB) X Rth(c-c) dBc A ° C Drain Current Channel Temperature Ri se Recommended gate resistance(Rg) : R g= 28 Ω(MAX.) ELECTRICAL CHARACTERIS TICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate.
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