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2SJ625 Dataheets PDF



Part Number 2SJ625
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet 2SJ625 Datasheet2SJ625 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1.5 0 to 0.1 1 2 FEATURES • 1.8 V dri.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1.5 0 to 0.1 1 2 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)2 = 171 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A) RDS(on)3 = 314 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION www.DataSheet4U.com PART NUMBER 2SJ625 PACKAGE SC-96 (Mini Mold Thin Type) Marking: XM ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT –20 m8.0 m3.0 m12 0.2 1.25 150 –55 to +150 V V A A W W °C °C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Body Diode Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Note2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15961EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 2SJ625 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = –16 V VGS = –4.0 V ID = –3.0 A IF = 3.0 A, VGS = 0 V TEST CONDITIONS VDS = –20 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = –10 V, ID = –1.0 mA VDS = –10 V, ID = –1.5 A VGS = –4.5 V, ID = –1.5 A VGS = –2.5 V, ID = –1.5 A VGS = –1.8 V, ID = –1.0 A VDS = –10 V VGS = 0 V f = 1.0 MHz VDD = –10 V, ID = –1.5 A VGS = –4.0 V RG = 10 Ω –0.45 2.0 –0.75 4.9 90 128 188 348 88 38 39 190 220 250 2.6 0.8 0.9 0.89 113 171 314 MIN. TYP. MAX. –10 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V m10 –1.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(−) 0 10% VGS 90% IG = −2 mA 50 Ω RL VDD VDD PG. 90% VDS(−) 90% 10% 10% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet D15961EJ1V0DS 2SJ625 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 1.25 1 0.75 0.5 0.25 0 0 Mounted on FR-4 board, t ≤ 5 sec 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - °C -100 R DS(on) Limited (V GS = − 4.5 V) ID - Drain Current - A ID(pulse) PW = 1 ms -10 -1 ID(DC) 10 ms -0.1 100 ms Single Pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm -1 -10 5s -0.01 -0.1 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W Single Pulse W ithout board 100 Mounted on FR-4 board of 5000 mm 2 x 1.1 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15961EJ1V0DS 3 2SJ625 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -12 Pulsed -10 ID - Drain Current - A ID - Drain Current - A -10 V DS = − 10 V Pulsed -1 T A = 125°C 75°C 25°C − 25°C -8 -6 -4 VGS = −4.5 V −2.5 V -0.1 -0.01 −1.8 V -2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VDS - Drain to Source Voltage - V -0.001 -0.0001 0 -1 -2 -3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S -1 VGS(off) - Gate Cut-off Voltage - V 100 VDS = −10 V Pulsed 10 T A = −25°C 25°C 75°C 125°C VDS = −10 V ID = −1.0 mA -0.8 -0.6 1 -0.4 .


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