2SJ625 Datasheet (data sheet) PDF





2SJ625 Datasheet, MOS FIELD EFFECT TRANSISTOR

2SJ625   2SJ625  

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRAN SISTOR FOR SWITCHING DESCRIPTION The 2 SJ625 is a switching device which can b e driven directly by a 1.8 V power sour ce. This device features a low on-state resistance and excellent switching cha racteristics, and is suitable for appli cations such as power switch of portabl e machine and so on. PACKAGE DRAWING ( Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1 .5 0 to 0.1 1 2 FEATURES • 1.8 V dr ive available • Low on-state resistan ce RDS(on)1 = 113 mΩ MAX. (VGS = –4 .5 V, ID = –1.5 A) RDS(on)2 = 171 m MAX. (VGS = –2.5 V, ID = –1.5 A) RDS(on)3

2SJ625 Datasheet, MOS FIELD EFFECT TRANSISTOR

2SJ625   2SJ625  
= 314 mΩ MAX. (VGS = –1.8 V, ID = 1.0 A) 0.95 0.95 0.65 0.9 to 1.1 1 .9 2.9 ±0.2 1 : Gate 2 : Source 3 : Dr ain ORDERING INFORMATION www.DataSheet 4U.com PART NUMBER 2SJ625 PACKAGE SC- 96 (Mini Mold Thin Type) Marking: XM ABSOLUTE MAXIMUM RATINGS (TA = 25°C) D rain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cu rrent (DC) (TA = 25°C) Drain Current ( pulse) Note1 EQUIVALENT CIRCUIT –20 m8.0 m3.0 m12 0.2 1.25 150 –55 to +15 0 V V A A W W °C °C Gate Protection D iode Source Gate Drain VDSS VGSS ID(DC ) ID(pulse) PT1 PT2 Tch Tstg Body Diod e Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Du ty Cycle ≤ 1% 2. Mounted on FR-4 boar d, t ≤ 5 sec. Note2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage ex ceeding the rated voltage may be applie d to this device. The information in th is document is subject to change withou t notice. Before using this document, p lease confirm that this is the latest v ersion. Not all devices/types availabl e in every country. Please check with l ocal NEC representative for availability and additional information. Docu








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