2SJ626

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1.5 FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A) 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION www.DataSheet4U.com PART NUMBER 2SJ626 PACKAGE SC-96 (Mini Mold Thin Type) Marking: XN EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg –60 m20 m1.5 m6.0 0.2 1.25 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Body Diode Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark Note2 Source The diode connected between the gate and source of the transistor serves as a protector against ESD...