2SJ628

Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --12 ±8 --2.5 Unit V V A A W W °C °C Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C --10 1.0 3.5 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--12V, VGS=0 VGS=±6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=-1.3A ID=-1.3A, VGS=--4.5V ID=-0.7A, VGS=--2.5V ID=-0.2A, VGS=--1.8V Ratings min --12 --10 ±10 --0.3 2.1 3.0 120 170 230 155 240 360 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : MB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can ha...