P-Channel Silicon MOSFET
Ordering number : ENN7271
2SJ628
P-Channel Silicon MOSFET
2SJ628
Ultrahigh-Speed Switching Applications
Preliminary Fe...
Description
Ordering number : ENN7271
2SJ628
P-Channel Silicon MOSFET
2SJ628
Ultrahigh-Speed Switching Applications
Preliminary Features
Package Dimensions
unit : mm 2062A
[2SJ628]
4.5 1.6 1.5
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
0.5 3 1.5 2 3.0
(Bottom view)
1
1.0
0.4
2.5 4.25max
0.4
0.75
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
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Symbol VDSS VGSS ID IDP PD Tch Tstg
Conditions
Ratings --12 ±8 --2.5
Unit V V A A W W °C °C
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C
--10 1.0 3.5 150 --55 to +150
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--12V, VGS=0 VGS=±6.4V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=-1.3A ID=-1.3A, VGS=--4.5V ID=-0.7A, VGS=--2.5V ID=-0.2A, VGS=--1.8V Ratings min --12 --10 ±10 --0.3 2.1 3.0 120 170 230 155 240 360 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ
Marking : MB
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