AO6402 Effect Transistor Datasheet

AO6402 Datasheet, PDF, Equivalent


Part Number

AO6402

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 4 Pages
Datasheet
Download AO6402 Datasheet


AO6402
Rev 3:Nov 2004
AO6402, AO6402L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device may be used as a load switch or in PWM
applications. AO6402L ( Green Product ) is offered in
a lead-free package.
Features
VDS (V) = 30V
ID = 6.9A
RDS(ON) < 28m(VGS = 10V)
RDS(ON) < 42m(VGS = 4.5V)
www.DataSheet4U.com
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
6.9
5.8
20
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6402
AO6402, AO6402L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
VGS=4.5V, ID=5.0A
Forward Transconductance
VDS=5V, ID=6.9A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=6.9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
Min
30
1
20
10
Typ
1.9
22.5
31.3
34.5
15.4
0.76
680
102
77
3
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
Max
1
5
100
3
28
38
42
1
3
820
3.6
16.7
8.1
20
Units
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Features Rev 3:Nov 2004 AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Fi eld Effect Transistor General Descripti on The AO6402 uses advanced trench tech nology to provide excellent RDS(ON) and low gate charge. This device may be us ed as a load switch or in PWM applicati ons. AO6402L ( Green Product ) is offer ed in a lead-free package. Features VD S (V) = 30V ID = 6.9A RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4 .5V) TSOP-6 Top View www.DataSheet4U.c om D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unles s otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current A Pulsed Dra in Current Power Dissipation B Maximum 30 ±20 6.9 5.8 20 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=2 5°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Rang e Thermal Characteristics Parameter Max imum Junction-to-Ambient A Maximum Junc tion-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State .
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