Effect Transistor. AO6402L Datasheet


AO6402L Transistor. Datasheet pdf. Equivalent


AO6402L


N-Channel Enhancement Mode Field Effect Transistor
Rev 3:Nov 2004

AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Product ) is offered in a lead-free package.

Features
VDS (V) = 30V ID = 6.9A RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V)

TSOP-6 Top View
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D

D D G

1 6 2 5 3 4

D D S

G S

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B

Maximum 30 ±20 6.9 5.8 20 2 1.44 -55 to 150

Units V V A

VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG

W °C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL

Typ 48 74 35

Max 62.5 110 40

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO6402, AO6402L

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A For...



AO6402L
Rev 3:Nov 2004
AO6402, AO6402L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device may be used as a load switch or in PWM
applications. AO6402L ( Green Product ) is offered in
a lead-free package.
Features
VDS (V) = 30V
ID = 6.9A
RDS(ON) < 28m(VGS = 10V)
RDS(ON) < 42m(VGS = 4.5V)
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TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
6.9
5.8
20
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6402L
AO6402, AO6402L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
VGS=4.5V, ID=5.0A
Forward Transconductance
VDS=5V, ID=6.9A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=6.9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
Min
30
1
20
10
Typ
1.9
22.5
31.3
34.5
15.4
0.76
680
102
77
3
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
Max
1
5
100
3
28
38
42
1
3
820
3.6
16.7
8.1
20
Units
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.




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