AO6408 Effect Transistor Datasheet

AO6408 Datasheet, PDF, Equivalent


Part Number

AO6408

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 4 Pages
Datasheet
Download AO6408 Datasheet


AO6408
AO6408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 1.8V to
12V. It is ESD protected. This device is suitable for
use as a load switch. Standard product AO6408 is Pb-
free (meets ROHS & Sony 259 specifications).
AO6408L is a Green Product ordering option.
AO6408 and AO6408L are electrically identical.
Features
VDS (V) = 20V
ID = 8.8A
(VGS = 10V)
RDS(ON) < 18m(VGS = 10V)
RDS(ON) < 20m(VGS = 4.5V)
RDS(ON) < 25m(VGS = 2.5V)
RDS(ON) < 32m(VGS = 1.8V)
ESD Rating: 2000V HBM
www.DataSheet4U.com
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
8.8
7
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6408
AO6408, AO6408L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Source leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=4.5V, ID=8A
VGS=2.5V, ID=6A
VGS=1.8V, ID=4A
Forward Transconductance
VDS=5V, ID=8.8A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=8.8A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=1.1,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=8.8A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/µs
Min
20
±12
0.5
40
Typ Max Units
V
10
25
µA
±10 µA
V
0.75 1
V
A
14.4
18.5
18
23
m
16 20 m
20.5 25 m
25.6 32 m
33 S
0.72 1
V
3A
1810
232
200
1.6
2200
2.2
pF
pF
pF
17.9 22
1.5
4.7
3.3
5.9
44
7.7
22 27
9.8
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Features AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description T he AO6408 uses advanced trench technolo gy to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12 V. It is ESD protected. This device is suitable for use as a load switch. Stan dard product AO6408 is Pbfree (meets RO HS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6 408 and AO6408L are electrically identi cal. Features VDS (V) = 20V (VGS = 10V ) ID = 8.8A RDS(ON) < 18m Ω (VGS = 10 V) RDS(ON) < 20m Ω (VGS = 4.5V) RDS(O N) < 25m Ω (VGS = 2.5V) RDS(ON) < 32m Ω (VGS = 1.8V) ESD Rating: 2000V HBM TSOP-6 Top View www.DataSheet4U.com D D D G 1 6 2 5 3 4 D D S G S Abso lute Maximum Ratings TA=25°C unless ot herwise noted Parameter Symbol VDS Drai n-Source Voltage Gate-Source Voltage Co ntinuous Drain Current A Pulsed Drain C urrent Power Dissipation B Maximum 20 ±12 8.8 7 40 2 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C.
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