AO6404 Effect Transistor Datasheet

AO6404 Datasheet, PDF, Equivalent


Part Number

AO6404

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 4 Pages
Datasheet
Download AO6404 Datasheet


AO6404
AO6404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6404 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
Standard Product AO6404 is Pb-free (meets ROHS
& Sony 259 specifications). AO6404L is a Green
Product ordering option. AO6404 and AO6404L are
electrically identical.
Features
VDS (V) = 20V
ID = 8.6A (VGS = 10V)
RDS(ON) < 17m(VGS = 10V)
RDS(ON) < 18m(VGS = 4.5V)
RDS(ON) < 24m(VGS = 2.5V)
RDS(ON) < 33m(VGS = 1.8V)
ESD Rating: 2000V HBM
www.DataSheet4U.com
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
8.6
6.8
30
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
45
70
33
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6404
AO6404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
10
25
µA
IGSS Gate-Body leakage current
VDS=0V, VGS=±10V
10 µA
BVGSO Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 0.75
1
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
A
VGS=10V, ID=8.5A
TJ=125°C
13.4
16
17
20
m
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
14.8 18
m
VGS=2.5V, ID=4A
18.8 24
m
VGS=1.8V, ID=3A
25.5 33
m
gFS Forward Transconductance
VDS=5V, ID=8A
36 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.73 1
V
IS Maximum Body-Diode Continuous Current
2.9 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1810
232
200
1.6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=8.5A
VGS=10V, VDS=10V, RL=1.2,
RGEN=3
IF=8.5A, dI/dt=100A/µs
IF=8.5A, dI/dt=100A/µs
17.9
1.5
4.7
2.5
7.2
49
10.8
22
9.8
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Features AO6404 N-Channel Enhancement Mode Field Effect Transistor General Description T he AO6404 uses advanced trench technolo gy to provide excellent RDS(ON), low ga te charge and operation with gate volta ges as low as 1.8V while retaining a 12 V VGS(MAX) rating. It is ESD protected. Standard Product AO6404 is Pb-free (me ets ROHS & Sony 259 specifications). AO 6404L is a Green Product ordering optio n. AO6404 and AO6404L are electrically identical. Features VDS (V) = 20V ID = 8.6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) R DS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V H BM TSOP-6 Top View D D G 1 6 2 5 3 4 D D S G D www.DataSheet4U.com S Abso lute Maximum Ratings TA=25°C unless ot herwise noted Parameter Symbol VDS Drai n-Source Voltage VGS Gate-Source Voltag e Continuous Drain Current A Pulsed Dra in Current Power Dissipation A B Maxim um 20 ±12 8.6 6.8 30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C .
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