AO6404

AO6404 20V N-Channel MOSFET General Description The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. RoHS and Halogen-Free Compliant Product Summary VDS (V) = 20V ID = 8.6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM ESD Protected 100% UIS Tested 100% Rg Tested TSOP6 Top View Bottom View Top View D Pi n 1 D1 D2 G3 6D 5D 4S G S Orderable Part Number AO6404 Package Type TSOP6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 8.6 6.8 30 2 1.28 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 45 70 33 Max 62.5 110 50 Units °C/W °C/W °C/W Rev.5.0: April 2016 www.aosmd.com Page 1 of 5 AO6404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltag...