AO6405 Effect Transistor Datasheet

AO6405 Datasheet, PDF, Equivalent


Part Number

AO6405

Description

P-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AO6405 Datasheet


AO6405
Aug 2002
AO6405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6405 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -30V
ID = -5 A
RDS(ON) < 52m(VGS = -10V)
RDS(ON) < 87m(VGS = -4.5V)
www.DataSheet4U.com
TSOP6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-5
-4.2
-20
2
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6405
AO6405
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=5.0A
VGS=-4.5V, ID=-4A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
Min
-30
-1
-10
6
Typ Max Units
-1
-5
±100
-1.8 -3
39
54
67
8.6
-0.77
52
70
87
-1
-2.8
V
µA
nA
V
A
m
m
S
V
A
700 pF
120 pF
75 pF
10
14.7 nC
7.6 nC
2 nC
3.8 nC
8.3 ns
5 ns
29 ns
14 ns
23.5 ns
13.4 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.


Features Aug 2002 AO6405 P-Channel Enhancement M ode Field Effect Transistor General Des cription The AO6405 uses advanced trenc h technology to provide excellent RDS(O N) with low gate charge. This device is suitable for use as a load switch or i n PWM applications. Features VDS (V) = -30V ID = -5 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) D TSOP6 Top View www.DataSheet4U.com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherw ise noted Parameter Symbol VDS Drain-So urce Voltage VGS Gate-Source Voltage Co ntinuous Drain Current A Pulsed Drain C urrent Power Dissipation A B Maximum - 30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 U nits V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Jun ction and Storage Temperature Range The rmal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction- to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady- State RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W Alph.
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