AO6415 P-Channel MOSFET Datasheet

AO6415 Datasheet, PDF, Equivalent


Part Number

AO6415

Description

20V P-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AO6415 Datasheet


AO6415
AO6415
20V P-Channel MOSFET
General Description
Product Summary
The AO6415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
Typical ESD protection
-20V
-3.3A
< 82m
< 100m
< 140m
HBM Class 2
TSOP6
Top View
Bottom View
Top View
D1
D2
G3
6D
5D
4S
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±12
-3.3
-2.7
-17
1.25
0.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
82
111
56
Max
100
140
70
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: Jul 2011
www.aosmd.com
Page 1 of 5

AO6415
AO6415
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS, ID=-250µΑ
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-3.3A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-3.3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-20
-0.5
-17
-0.85
68
95
80
107
8.6
-0.76
-1
-5
±10
-1.2
82
115
100
140
-1
-1.5
V
µA
µA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
250 325 400
40 63 85
22 37 52
11.2 17
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
3.2 4.5 nC
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-2A
0.6 nC
Qgd Gate Drain Charge
0.9 nC
tD(on)
Turn-On DelayTime
11 ns
tr Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=5, 5.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
22 ns
tf Turn-Off Fall Time
8 ns
trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs
6.1 ns
Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs
1.4 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jul 2011
www.aosmd.com
Page 2 of 5


Features AO6415 20V P-Channel MOSFET General Des cription Product Summary The AO6415 u ses advanced trench technology to provi de excellent RDS(ON), low gate charge a nd operation with gate voltages as low as 2.5V. This device is suitable for us e as a load switch or in PWM applicatio ns. VDS ID (at VGS=-10V) RDS(ON) (at V GS= -10V) RDS(ON) (at VGS= -4.5V) RDS(O N) (at VGS= -2.5V) Typical ESD protect ion -20V -3.3A < 82mΩ < 100mΩ < 14 0mΩ HBM Class 2 TSOP6 Top View Bot tom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=2 5°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gat e-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed D rain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction an d Storage Temperature Range TJ, TSTG Maximum -20 ±12 -3.3 -2.7 -17 1.25 0.8 -55 to 150 Thermal Characteristics Pa rameter Maximum Junction-to-Ambient A M aximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-Sta.
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