AO6419 Effect Transistor Datasheet

AO6419 Datasheet, PDF, Equivalent


Part Number

AO6419

Description

P-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 4 Pages
Datasheet
Download AO6419 Datasheet


AO6419
AO6419
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6419 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6419 is Pb-free
(meets ROHS & Sony 259 specifications). AO6419L
is a Green Product ordering option. AO6419 and
AO6419L are electrically identical.
Features
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) < 52m(VGS = -10V)
RDS(ON) < 87m(VGS = -4.5V)
RDS(ON) < 110m(VGS = -3.5V)
www.DataSheet4U.com
TSOP6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-5
-4.2
-20
2
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6419
AO6419
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=5.0A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
VGS=-3.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3,
RGEN=3
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Min
-30
-1
-20
6
Typ Max Units
-1
-5
±100
-1.8 -3
39
54
67
85
8.6
-0.77
52
70
87
110
-1
-2.8
V
µA
nA
V
A
m
m
m
S
V
A
700 840
120
75
10 15
pF
pF
pF
14.7
7.6
2
3.8
8.3
5
29
14
23.5
13.4
18
9.5
30
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 0: Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Features AO6419 P-Channel Enhancement Mode Field Effect Transistor General Description T he AO6419 uses advanced trench technolo gy to provide excellent RDS(ON) with lo w gate charge. This device is suitable for use as a load switch or in PWM appl ications. Standard Product AO6419 is Pb -free (meets ROHS & Sony 259 specificat ions). AO6419L is a Green Product order ing option. AO6419 and AO6419L are elec trically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (V GS = -4.5V) RDS(ON) < 110mΩ (VGS = -3 .5V) D TSOP6 Top View www.DataSheet4U. com D D G 1 6 2 5 3 4 D D S G S Ab solute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Dr ain-Source Voltage VGS Gate-Source Volt age Continuous Drain Current A Pulsed D rain Current Power Dissipation A B Max imum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA= 25°C TA=70°C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter .
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