AO6419 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6419 uses advanced trench technology...
AO6419 P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a Green Product ordering option. AO6419 and AO6419L are electrically identical.
Features
VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V)
D TSOP6 Top View
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D D G
1 6 2 5 3 4
D D S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 47.5 74 37
Max 62.5 110 50
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO6419
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current ...