CDSH270

CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster switching speed, and a more robust package. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25 °C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VRRM IF IFRM IFSM PD TJ Tstg ΘJA 100 100 350 750 100 -65 to +125 -65 to +150 300 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP IR VR=50V IR VR=50V, TA=100°C VF IF=1.0mA VF IF=100mA 0.9 VF IF=200mA CJ VR=10V, f=1.0MHz 1.2 MAX 100 20 0.45 1.0 UNITS V mA mA mA mW °C °C °C/W UNITS nA μA V V V pF R1 (16-August 2012) CDSH270 SILICON SCHOTTKY DIODE DO-35 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R1 (16-August 2012) ...