CDSH270 SCHOTTKY DIODE Datasheet

CDSH270 Datasheet, PDF, Equivalent


Part Number

CDSH270

Description

SCHOTTKY DIODE

Manufacture

Central Semiconductor

Total Page 2 Pages
Datasheet
Download CDSH270 Datasheet


CDSH270
CDSH270
SILICON SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDSH270 silicon
Schottky diode is designed to replace the 1N270
Germanium diode. Some advantages over the 1N270
are lower forward voltage, lower leakage current, faster
switching speed, and a more robust package.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25 °C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ
Tstg
ΘJA
100
100
350
750
100
-65 to +125
-65 to +150
300
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR VR=50V
IR VR=50V, TA=100°C
VF IF=1.0mA
VF IF=100mA
0.9
VF IF=200mA
CJ VR=10V, f=1.0MHz
1.2
MAX
100
20
0.45
1.0
UNITS
V
mA
mA
mA
mW
°C
°C
°C/W
UNITS
nA
μA
V
V
V
pF
R1 (16-August 2012)

CDSH270
CDSH270
SILICON SCHOTTKY DIODE
DO-35 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (16-August 2012)


Features CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTIO N: The CENTRAL SEMICONDUCTOR CDSH270 si licon Schottky diode is designed to rep lace the 1N270 Germanium diode. Some ad vantages over the 1N270 are lower forwa rd voltage, lower leakage current, fast er switching speed, and a more robust p ackage. MARKING: FULL PART NUMBER DO-3 5 CASE MAXIMUM RATINGS: (TA=25 °C) Pe ak Repetitive Reverse Voltage Continuou s Forward Current Peak Repetitive Forwa rd Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating Jun ction Temperature Storage Temperature T hermal Resistance SYMBOL VRRM IF IFRM IFSM PD TJ Tstg ΘJA 100 100 350 750 1 00 -65 to +125 -65 to +150 300 ELECTRI CAL CHARACTERISTICS: (TA=25°C unless o therwise noted) SYMBOL TEST CONDITIONS TYP IR VR=50V IR VR=50V, TA=100°C VF IF=1.0mA VF IF=100mA 0.9 VF IF=2 00mA CJ VR=10V, f=1.0MHz 1.2 MAX 100 20 0.45 1.0 UNITS V mA mA mA mW °C C °C/W UNITS nA μA V V V pF R1 (16-August 2012) CDSH270 SILICON SC.
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