PD- 91667D
IRF7321D2
FETKY MOSFET & Schottky Diode
l l l l l l
TM
Co-packaged HEXFET® Power MOSFET and Schottky Diode ...
PD- 91667D
IRF7321D2
FETKY MOSFET &
Schottky Diode
l l l l l l
TM
Co-packaged HEXFET® Power MOSFET and
Schottky Diode Ideal For Buck
Regulator Applications P-Channel HEXFET® Low VF
Schottky Rectifier Generation 5 Technology SO-8 Footprint
A A S G
1
8
K K D D
VDSS = -30V RDS(on) = 0.062Ω
Schottky Vf = 0.52V
2
7
3
6
4
5
Top View
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board space saving solution for switching
regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
www.DataSheet4U.com
SO-8
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range
Maximum
-4.7 -3.8 -38 2.0 1.3 16 ± 20 -5.0 -55 to +150
Units
A
W mW/°C V V/ns °C...