IRF7321D2PBF Schottky Diode Datasheet

IRF7321D2PBF Datasheet, PDF, Equivalent


Part Number

IRF7321D2PBF

Description

FETKY MOSFET & Schottky Diode

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download IRF7321D2PBF Datasheet


IRF7321D2PBF
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PD - 95297
IRF7321D2PbF
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
FETKY TM MOSFET & Schottky Diode
A1
A2
S3
8K
7K
VDSS = -30V
6 D RDS(on) = 0.062
G4
5 D Schottky Vf = 0.52V
Top View
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
-4.7
-3.8
-38
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
62.5
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ ISD -2.9A, di/dt -77A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs – duty cycle 2%
„ Surface mounted on FR-4 board, t 10sec.
www.irf.com
10/12/04

IRF7321D2PBF
IRF7321D2PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
-30 ––– ––– V VGS = 0V, ID = -250µA
––– 0.042 0.062
––– 0.076 0.098
VGS = -10V, ID = -4.9A ƒ
VGS = -4.5V, ID = -3.6A ƒ
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-1.0 ––– ––– V VDS = VGS, ID = -250µA
––– 7.7 ––– S VDS = -15V, ID = -4.9A
IDSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100 nA
VGS = -20V
VGS = 20V
Qg Total Gate Charge
––– 23 34
ID = -4.9A
Qgs Gate-to-Source Charge
––– 3.8 5.7 nC VDS = -15V
Qgd Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 VGS = -10V, See Fig. 6 ƒ
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 13
––– 13
––– 34
19
20
51
VDD = -15V
ns
ID = -1.0A
RG = 6.0
tf Fall Time
Ciss Input Capacitance
––– 32 48
––– 710 –––
RD = 15, ƒ
VGS = 0V
Coss Output Capacitance
––– 380 ––– pF
Crss Reverse Transfer Capacitance
––– 180 –––
MOSFET Source-Drain Ratings and Characteristics
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current(Body Diode) ––– ––– -2.5
ISM Pulsed Source Current (Body Diode) ––– ––– -30 A
VSD Body Diode Forward Voltage
––– -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V
trr Reverse Recovery Time (Body Diode) –––
Qrr Reverse Recovery Charge
–––
Schottky Diode Maximum Ratings
44
42
66
63
ns TJ = 25°C, IF = -1.7A
nC di/dt = 100A/µs ƒ
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.2
2.0 A
200
20 A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
See Fig.14
Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter
Vfm Max. Forward voltage drop
Irm
Ct
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
0.52 V
0.79
0.30
37
mA
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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Features PD - 95297 IRF7321D2PbF Co-packaged HEX FET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l S O-8 Footprint l Lead-Free Description l FETKY MOSFET & Schottky Diode A A S G 1 2 3 4 8 7 6 5 TM K K D D VDSS = - 30V RDS(on) = 0.062Ω Schottky Vf = 0. 52V Top View The FETKYTM family of Co -packaged HEXFETs and Schottky diodes o ffer the designer an innovative board s pace saving solution for switching regu lator and power management applications . Generation 5 HEXFETs utilize advanced processing techniques to achieve extre mely low on-resistance per silicon area . Combinining this technology with Inte rnational Rectifier's low forward drop Schottky rectifiers results in an extre mely efficient device suitable for use in a wide variety of portable electroni cs applications. The SO-8 has been modi fied through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for.
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