IRF7326D2 Schottky Diode Datasheet

IRF7326D2 Datasheet, PDF, Equivalent


Part Number

IRF7326D2

Description

FETKY MOSFET / Schottky Diode

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download IRF7326D2 Datasheet


IRF7326D2
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q Co-packaged HEXFET® Power MOSFET
and Schottky Diode
q Ideal For Buck Regulator Applications
q P-Channel HEXFET
q Low VF Schottky Rectifier
q Generation 5 Technology
q SO-8 Footprint
PD - 93763
IRF7326D2
FETKYMOSFET / Schottky Diode
A1
A2
S3
8K
7K
6D
VDSS = -30V
RDS(on) = 0.10
G4
5D
Schottky Vf = 0.52V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current 
Pulsed Drain Current Œ
Power Dissipation 
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Junction and Storage Temperature Range
Maximum
-3.6
-2.9
-29
2.0
1.3
16
± 20
-5.0
-55 to +150
Thermal Resistance Ratings
S O -8
Units
A
W
mW/°C
V
V/ns
°C
Parameter
RθJA
Junction-to-Ambient 
Maximum
62.5
Units
°C/W
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
 ISD -1.8A, di/dt -90A/µs, VDD V(BR)DSS, TJ 150°C
Ž Pulse width 300µs; duty cycle 2%
 Surface mounted on FR-4 board, t 10sec.
www.irf.com
1
8/19/99

IRF7326D2
IRF7326D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 — — V VGS = 0V, ID = -250µA
RDS(on)
Static Drain-to-Source On-Resistance
— 0.073 0.10 VGS = -10V, ID = -1.8A ƒ
— 0.13 0.16
VGS = -4.5V, ID = -1.5A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 — — V VDS = VGS, ID = -250µA
gfs Forward Transconductance
2.5 — — S VDS = -24V, ID = -1.8A
IDSS Drain-to-Source Leakage Current
— — -1.0 µ A VDS = -24V, VGS = 0V
— — -25
VDS = -24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
— — 100 n A VGS = -20V
Gate-to-Source Reverse Leakage
— — -100
VGS = 20V
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
— — 25
ID = -1.8A
— — 2.9 nC VDS = -24V
— — 9.0
VGS = -10V (see figure 6) Ž
td(on)
Turn-On Delay Time
— 11 —
VDD = -15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
— 17 —
— 25 —
— 18 —
ns ID = -1.8A
RG = 6.0
RD = 8.2Ž
Ciss Input Capacitance
— 440 —
VGS = 0V
Coss Output Capacitance
— 200 — pF VDS = -25V
Crss Reverse Transfer Capacitance
— 93 —
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS Continuous Source Current (Body Diode) — — -2.5 A
ISM
Pulsed Source Current (Body Diode)
— — -29
VSD Body Diode Forward Voltage
— — -1.0 V
trr Reverse Recovery Time (Body Diode) — 53 80 ns
Qrr Reverse Recovery Charge
Schottky Diode Maximum Ratings
— 66 99 nC
Conditions
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, IF = -1.8A
di/dt = 100A/µs Ž
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
2.8
1.8 A
200
20 A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter
Vfm Max. Forward voltage drop
Irm
Ct
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
0.52 V
0.79
0.30 mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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Features PD - 93763 IRF7326D2 FETKY™ MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Dio de Ideal For Buck Regulator Application s P-Channel HEXFET Low VF Schottky Rect ifier Generation 5 Technology SO-8 Foot print A A S G 1 8 7 K K D D VDSS = -30V RDS(on) = 0.10Ω Schottky Vf = 0 .52V 2 3 6 4 5 Top Vie w Descrip tion The FETKY family of co-packaged MO SFETs and Schottky diodes offers the de signer an innovative, board space savin g solution for switching regulator and power management applications. Generati on 5 HEXFET Power MOSFETs utilize advan ced processing techniques to achieve ex tremely low on-resistance per silicon a rea. Combinining this technology with I nternational Rectifier's low forward dr op Schottky rectifiers results in an ex tremely efficient device suitable for u se in a wide variety of portable electr onics applications. www.DataSheet4U.com S O -8 The SO-8 has been modified th rough a customized leadframe for enhanced thermal characteristics. T.
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