IRF7328 Power MOSFET Datasheet

IRF7328 Datasheet, PDF, Equivalent


Part Number

IRF7328

Description

HEXFET Power MOSFET

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download IRF7328 Datasheet


IRF7328
q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Available in Tape & Reel
VDSS
-30V
PD -94000
IRF7328
HEXFET® Power MOSFET
RDS(on) max
21m@VGS = -10V
32m@VGS = -4.5V
ID
-8.0A
-6.8A
www.DataSheet4U.com
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
To p V iew
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient ƒ
www.irf.com
Max.
62.5
Units
°C/W
1
10/04/00

IRF7328
IRF7328
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– –––
––– -0.018 –––
––– 17 21
––– 26.8 32
V
V/°C
m
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -8.0A ‚
VGS = -4.5V, ID = -6.8A ‚
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
12 ––– ––– S VDS = -10V, ID = -8.0A
IDSS Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 52 78
ID = -8.0A
Qgs Gate-to-Source Charge
––– 9.8 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 8.3 –––
––– 13 20
VGS = -10V
VDD = -15V, VGS = -10.0V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 15 23 ns ID = -1.0A
––– 198 297
RG = 6.0
––– 98 147
RD = 15‚
Ciss Input Capacitance
––– 2675 –––
VGS = 0V
Coss
Output Capacitance
––– 409 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance
––– 262 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -2.0
––– ––– -32
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
G
D
S
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
––– 37 56 ns TJ = 25°C, IF = -2.0A
––– 36 54 nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com


Features PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low O n-Resistance Dual P-Channel MOSFET Avai lable in Tape & Reel VDSS -30V RDS(on ) max 21mΩ@VGS = -10V 32mΩ@VGS = -4 .5V ID -8.0A -6.8A Description New tr ench HEXFET® Power MOSFETs from Intern ational Rectifier utilize advanced proc essing techniques to achieve extremely low on-resistance per silicon area. Thi s benefit, combined with the ruggedized device design that HEXFET power MOSFET s are well known for, provides the desi gner with an extremely efficient and re liable device for use in battery and lo ad management applications. S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 T o p V ie w SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TST G Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain C urrent, VGS @ -10V Pulsed Drain Current  Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating F.
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