IRF7329 Power MOSFET Datasheet

IRF7329 Datasheet, PDF, Equivalent


Part Number

IRF7329

Description

HEXFET Power MOSFET

Manufacture

International Rectifier

Total Page 9 Pages
Datasheet
Download IRF7329 Datasheet


IRF7329
www.DataSheet4U.com
l Trench Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Low Profile (<1.8mm)
l Available in Tape & Reel
VDSS
-12V
PD- 94095A
IRF7329
HEXFET® Power MOSFET
RDS(on) max (mW)
17@VGS = -4.5V
21@VGS = -2.5V
30@VGS = -1.8V
ID
±9.2A
±7.4A
±4.6A
Description
New P-Channel HEXFETÒ power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1
G1
S2
G2
18
27
36
45
Top View
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RqJL
RqJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
www.irf.com
Max.
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
01/29/04

IRF7329
IRF7329
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 ––– –––
––– 0.007 –––
––– ––– 17
––– ––– 21
––– ––– 30
-0.40 ––– -0.90
25 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 38 57
––– 6.8 10
––– 8.1 12
––– 10 –––
––– 8.6 –––
––– 340 –––
––– 260 –––
––– 3450 –––
––– 1000 –––
––– 640 –––
V
V/°C
mW
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -9.2A ‚
VGS = -2.5V, ID = -7.4A ‚
VGS = -1.8V, ID = -4.6A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -9.2A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
VGS = 8.0V
ID = -9.2A
VDS = -6.0V
VGS = -4.5V
VDD = -6.0V
ID = -1.0A
RD = 6.0W
VGS = -4.5V ‚
VGS = 0V
VDS = -10V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
50
48
Max.
-2.0
-37
-1.2
75
72
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.0A, VGS = 0V ‚
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width £ 400µs; duty cycle £ 2%.
ƒ When mounted on 1 inch square copper board.
2 www.irf.com


Features PD- 94095A HEXFET® Power MOSFET l l l l l IRF7329 ID ±9.2A ±7.4A ±4.6A T rench Technology Ultra Low On-Resistanc e Dual P-Channel MOSFET Low Profile (<1 .8mm) Available in Tape & Reel VDSS -1 2V RDS(on) max (mW) 17@VGS = -4.5V 21@ VGS = -2.5V 30@VGS = -1.8V New P-Chann el HEXFET Ò power MOSFETs from Interna tional Rectifier utilize advanced proce ssing techniques to achieve extremely l ow on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the desig ner with an extremely efficient and rel iable device for use in a wide variety of applications. Description S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 ww w.DataSheet4U.com The SO-8 has been mo dified through a customized leadframe f or enhanced thermal characteristics and multiple-die capability making it idea l in a variety of power applications. W ith these improvements, multiple device s can be used in an application with dramatically reduced board spac.
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