Document
PD - 95042
IRF7329PbF
HEXFET® Power MOSFET
l l l l l l
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free
VDSS
-12V
RDS(on) max (mW)
17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V
ID
±9.2A ±7.4A ±4.6A
Description
New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2 D2
6 5
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The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -9.2 -7.4 -37 2.0 1.3 16 ± 8.0 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 62.5
Units
°C/W
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1
10/7/04
IRF7329PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
RDS(on)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -12 ––– ––– -0.40 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.007 ––– ––– ––– ––– ––– ––– ––– ––– ––– 38 6.8 8.1 10 8.6 340 260 3450 1000 640
Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 17 VGS = -4.5V, ID = -9.2A mΩ VGS = -2.5V, ID = -7.4A 21 30 VGS = -1.8V, ID = -4.6A -0.90 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -9.2A -1.0 VDS = -9.6V, VGS = 0V µA -25 VDS = -9.6V, VGS = 0V, TJ = 70°C -100 nA VGS = -8.0V 100 VGS = 8.0V 57 ID = -9.2A 10 nC VDS = -6.0V 12 VGS = -4.5V ––– V DD = -6.0V ns ––– ID = -1.0A ––– RD = 6.0Ω ––– VGS = -4.5V ––– VGS = 0V ––– pF VDS = -10V ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units ––– ––– ––– ––– 50 48 -2.0 A -37 -1.2 75 72 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V TJ = 25°C, IF = -2.0A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7329PbF
100
VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP
10
1
-1.2V
-1.2V
20µs PULSE WIDTH TJ = 150 °C
1 10
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10
1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -9.2A
-I D, Drain-to-Source Current (Α )
1.5
T J = 150°C
10
1.0
T J = 25°C VDS = -10V 20µs PULSE WIDTH
1.0 1.4 1.8 2.2
0.5
1
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7329PbF
5000
10
-VGS , Gate-to-Source Voltage (V)
4000
VGS = 0V, f = 1 MHZ Ciss = C + C gs gd, C ds SHORTED Crss = C gd
ID = -9.2A VDS =-9.6V VDS =-6V
C, Capacitance(pF)
Ciss
3000
Coss = C ds + C gd
8
6
2000
4
Coss
1000
Crss
2
0 1 10 100
0
0
10
20
30
40
50
60
70
-V DS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source .