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IRF7329PBF Dataheets PDF



Part Number IRF7329PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF7329PBF DatasheetIRF7329PBF Datasheet (PDF)

PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V ID ±9.2A ±7.4A ±4.6A Description New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device de.

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PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V ID ±9.2A ±7.4A ±4.6A Description New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -9.2 -7.4 -37 2.0 1.3 16 ± 8.0 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ. ––– ––– Max. 20 62.5 Units °C/W www.irf.com 1 10/7/04 IRF7329PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 ––– ––– ––– ––– -0.40 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.007 ––– ––– ––– ––– ––– ––– ––– ––– ––– 38 6.8 8.1 10 8.6 340 260 3450 1000 640 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 17 VGS = -4.5V, ID = -9.2A ‚ mΩ VGS = -2.5V, ID = -7.4A ‚ 21 30 VGS = -1.8V, ID = -4.6A ‚ -0.90 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -9.2A -1.0 VDS = -9.6V, VGS = 0V µA -25 VDS = -9.6V, VGS = 0V, TJ = 70°C -100 nA VGS = -8.0V 100 VGS = 8.0V 57 ID = -9.2A 10 nC VDS = -6.0V 12 VGS = -4.5V ––– V DD = -6.0V ns ––– ID = -1.0A ––– RD = 6.0Ω ––– VGS = -4.5V ‚ ––– VGS = 0V ––– pF VDS = -10V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 50 48 -2.0 A -37 -1.2 75 72 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V ‚ TJ = 25°C, IF = -2.0A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on 1 inch square copper board. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7329PbF 100 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 10 1 -1.2V -1.2V 20µs PULSE WIDTH TJ = 150 °C 1 10 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 1 0.1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -9.2A -I D, Drain-to-Source Current (Α ) 1.5 T J = 150°C 10 1.0 T J = 25°C VDS = -10V 20µs PULSE WIDTH 1.0 1.4 1.8 2.2 0.5 1 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7329PbF 5000 10 -VGS , Gate-to-Source Voltage (V) 4000 VGS = 0V, f = 1 MHZ Ciss = C + C gs gd, C ds SHORTED Crss = C gd ID = -9.2A VDS =-9.6V VDS =-6V C, Capacitance(pF) Ciss 3000 Coss = C ds + C gd 8 6 2000 4 Coss 1000 Crss 2 0 1 10 100 0 0 10 20 30 40 50 60 70 -V DS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source .


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