IRF7329PBF Power MOSFET Datasheet

IRF7329PBF Datasheet, PDF, Equivalent


Part Number

IRF7329PBF

Description

HEXFET Power MOSFET

Manufacture

International Rectifier

Total Page 9 Pages
Datasheet
Download IRF7329PBF Datasheet


IRF7329PBF
www.DataSheet4U.com
l Trench Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Low Profile (<1.8mm)
l Available in Tape & Reel
l Lead-Free
VDSS
-12V
PD - 95042
IRF7329PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
17@VGS = -4.5V
21@VGS = -2.5V
30@VGS = -1.8V
ID
±9.2A
±7.4A
±4.6A
Description
New P-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1
G1
S2
G2
18
27
36
45
Top View
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
10/7/04

IRF7329PBF
IRF7329PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 ––– –––
––– 0.007 –––
––– ––– 17
––– ––– 21
––– ––– 30
-0.40 ––– -0.90
25 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 38 57
––– 6.8 10
––– 8.1 12
––– 10 –––
––– 8.6 –––
––– 340 –––
––– 260 –––
––– 3450 –––
––– 1000 –––
––– 640 –––
V
V/°C
m
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -9.2A ‚
VGS = -2.5V, ID = -7.4A ‚
VGS = -1.8V, ID = -4.6A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -9.2A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
VGS = 8.0V
ID = -9.2A
VDS = -6.0V
VGS = -4.5V
VDD = -6.0V
ID = -1.0A
RD = 6.0
VGS = -4.5V ‚
VGS = 0V
VDS = -10V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -2.0
––– ––– -37
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
G
D
S
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
––– 50 75 ns TJ = 25°C, IF = -2.0A
––– 48 72 nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board.
2 www.irf.com


Features PD - 95042 IRF7329PbF HEXFET® Power MO SFET l l l l l l Trench Technology Ult ra Low On-Resistance Dual P-Channel MOS FET Low Profile (<1.8mm) Available in T ape & Reel Lead-Free VDSS -12V RDS(on ) max (mW) 17@VGS = -4.5V 21@VGS = -2.5 V 30@VGS = -1.8V ID ±9.2A ±7.4A ±4. 6A Description New P-Channel HEXFET ® power MOSFETs from International Recti fier utilize advanced processing techni ques to achieve extremely low on-resist ance per silicon area. This benefit, co mbined with the ruggedized device desig n that HEXFET Power MOSFETs are well kn own for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applicati ons. S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.com The SO -8 has been modified through a customiz ed leadframe for enhanced thermal chara cteristics and multiple-die capability making it ideal in a variety of power a pplications. With these improvements, m ultiple devices can be used in an application with dramatically redu.
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