IRLI640G Power MOSFET Datasheet

IRLI640G Datasheet, PDF, Equivalent


Part Number

IRLI640G

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
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IRLI640G
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HEXFET® Power MOSFET
PD - 9.1237
IRLI640G
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
VDSS = 200V
RDS(on) = 0.18
ID = 9.9A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
9.9
6.3
40
40
0.32
±10
290
9.9
4.0
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
Typ.
––––
––––
Max.
3.1
65
Units
°C/W
To Order
Revision 0

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IRLI640G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
200 ––– ––– V VGS = 0V, ID = 250µA
––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.18
––– ––– 0.27
VGS = 5.0V, ID = 5.9A
VGS = 4.0V, ID = 5.0A
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
16 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 66
VDS = 50V, ID = 10A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 160°C
VGS = 10V
VGS = -10V
ID = 17A
––– ––– 9.0
––– ––– 38
nC VDS = 160V
VGS = 10V, See Fig. 6 and 13
––– 8.0 ––– ns VDD = 100V
––– 83 –––
ID = 17A
––– 44 –––
RG = 4.6
––– 52 –––
RD = 5.7Ω, See Fig. 10
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
––– 1800 –––
––– 400 –––
VGS = 0V
pF VDS = 25V
––– 120 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 9.9
showing the
A
integral reverse
––– ––– 40
p-n junction diode.
––– ––– 2.0 V TJ = 25°C, IS = 9.9A, VGS = 0V
––– 310 470 ns TJ = 25°C, IF = 17A
––– 3.2 4.8 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.4mH
RG = 25, IAS = 9.9A. (See Figure 12)
ISD 17A, di/dt 150A/µs, VDD V(BR)DSS,
TJ 150°C
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
To Order


Features Previous Datasheet Index Next Data She et PD - 9.1237 IRLI640G HEXFET® Powe r MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creep age Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Descript ion Third Generation HEXFETs from Inter national Rectifier provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in comm ercial-industrial applications. The mou lding compound used provides a high iso lation capability and a low thermal res istance between the tab and external he atsink. This isolation is equivalent to using a 100 micron mica barrier with s tandard TO-220 product. The Fullpak is mounted to a heatsink using a single cl ip or by a single screw fixing. VDSS = 200V RDS(on) = 0.18Ω ID = 9.9A www. DataSheet4U.com Absolute Maximum Ratings Parameter ID @ TC = 25°C.
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