Power MOSFET. IRLI640GPBF Datasheet


IRLI640GPBF MOSFET. Datasheet pdf. Equivalent


IRLI640GPBF


HEXFET Power MOSFET
PD- 95654

IRLI640GPbF

• Lead-Free

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IRLI640GPbF

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IRLI640GPbF

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IRLI640GPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer

+ +

-

• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test

+ -

*

Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple ≤ 5%

ISD

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS

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IRLI640GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)

TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE
IR F I840G 924K 34 32

Note: "P" in assembly line position indicates "Lead-Free"

D AT E COD E YE AR 9 = 19...



IRLI640GPBF
• Lead-Free
www.DataSheet4U.com
PD- 95654
IRLI640GPbF
www.irf.com
1
7/26/04

IRLI640GPBF
IRLI640GPbF
2 www.irf.com




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