GaAs FET. MGFC47A7785 Datasheet

MGFC47A7785 FET. Datasheet pdf. Equivalent

Part MGFC47A7785
Description C band internally matched power GaAs FET
Feature < C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION The MG.
Manufacture Mitsubishi Electric
Datasheet
Download MGFC47A7785 Datasheet



MGFC47A7785
< C band internally matched power GaAs FET >
MGFC47A7785
7.7 – 8.5 GHz BAND / 47W
DESCRIPTION
The MGFC47A7785 is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 – 8.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=46.7dBm (TYP.) @f=7.7 – 8.5GHz
High power gain
GLP=5.7dB (TYP.) @f=7.7 – 8.5GHz
High power added efficiency
PAE=30% (TYP.) @f=7.7 – 8.5GHz
APPLICATION
Solid-state power amplifier for satellite earth-station
communication transmitter and VSAT
OUTLINE DRAWING
Unit : millimeters
2 4+/-0.3
(1)
(2 )
(3)
0 .7 +/-0.15
20 .4 +/-0.2
1 6.7
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=9.8A RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-20
VGSO Gate to source breakdown voltage
-10
IGR Reverse gate current
-130
IGF Forward gate current
168
PT *1 Total power dissipation
168
Tch Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
mA
mA
W
C
C
GF-53
(1) : Gate
(2) : Source
(3) : Drain
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
VDS=3V,ID=168mA
P1dB
Output power at 1dB gain compression IDS=10V,ID(RF off)=9.8A
GLP
Linear Power Gain
f=7.7 – 8.5GHz
ID Drain current
PAE
Power added efficiency
IM3*2
3rd order IM distortion
Rth(ch-c) *3 Thermal resistance
delta Vf method
*2 : Item -51,2 tone test,Po=35dBm Single Carrier Level,f=8.5GHz,Delta f=10MHz
*3 : Channel-case
Min.
-1
45.7
4.7
-
-
-39
-
Limits
Typ.
-
46.7
5.7
11
30
-42
0.8
Max.
-4
-
-
-
-
-
0.9
Unit
V
dBm
dB
A
%
dBc
C/W
Publication Date : Apr., 2011
1



MGFC47A7785
< C band internally matched power GaAs FET >
MGFC47A7785
7.7 – 8.5 GHz BAND / 47W
MGFC47A5864 S-parameters( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S11,S22
Smith Chart
Z=50Ω
0.5
1.0
0.2
0.0
0.2 0.5
-0.2
1.0
-0.5
-1.0
S11 S21,S22
S22 Polar Chart
5.0
5
5.0
4
4.0
S21
S12
2.0
3
2.0 3.0
2
2.0
1
1.0
5.0
0
-5 -4 -3 - 2 - 1 0 1 2 3 4 5
0.0
-1 0.01
-2.0
-5.0
-2
0.02
-3
0.03
-4 0.04
-5
0.05
S Parameters(TYP.)
f S11 S21 S12 S22
(GHz) MAG. ANG(deg.) [MAG] [ANG] [MAG] [ANG] [MAG] [ANG]
5.60
0.702 -163.8 2.723
10.1
0.024
-23.0 0.225 -76.8
5.65
0.676 -175.6 2.836
0.3
0.027
-42.2
0.194
-86.4
5.70
0.646 171.6 2.932
-9.7
0.030
-57.8
0.164
-97.8
5.75
0.621 158.6 3.011
-19.8
0.036
-71.4
0.132 -111.2
5.80
0.595 144.8 3.072
-30.0
0.040
-82.1
0.106 -129.1
5.85
0.576 131.1 3.091
-40.0
0.044
-95.0
0.087 -148.9
5.90
0.556 116.8 3.108
-49.8
0.049 -105.8 0.077 -175.9
5.95
0.540 102.9 3.111
-59.5
0.053 -117.2 0.075 158.2
6.00 0.528 89.8 3.082 -69.1 0.056 -126.1 0.083 135.8
6.05 0.518 76.5 3.061 -78.5 0.059 -135.8 0.090 119.1
6.10 0.514 64.2 3.033 -87.4 0.062 -144.8 0.102 106.2
6.15 0.510 51.9 2.999 -96.3 0.066 -153.7 0.110 97.2
6.20 0.508 40.5 2.961 -104.9 0.068 -162.2 0.118 87.5
6.25 0.502 29.4 2.933 -113.6 0.072 -170.7 0.125 81.7
6.30 0.498 18.8 2.888 -121.8 0.074 -177.0 0.126 74.6
6.35
0.493
8.4
2.859 -130.1 0.074 174.0 0.128
68.4
6.40
0.486
-2.0
2.817 -138.4 0.076 166.5 0.130
62.4
6.45
0.483
-11.9
2.793 -146.5 0.078 158.4 0.129
57.7
6.50
0.473
-22.4
2.770 -154.6 0.081 152.1 0.126
52.8
6.55
0.471
-33.0
2.751 -163.1 0.082 144.0 0.120
48.6
6.60
0.463
-44.9
2.727 -171.4 0.084 135.6 0.111
44.0
This S-Parameter data show measurements performed on each single-ended FET
Publication Date : Apr., 2011
2





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