MGFS52BN2122A GaAs FET Datasheet

MGFS52BN2122A Datasheet, PDF, Equivalent


Part Number

MGFS52BN2122A

Description

power GaAs FET

Manufacture

Mitsubishi Electric

Total Page 8 Pages
Datasheet
Download MGFS52BN2122A Datasheet


MGFS52BN2122A
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
DESCRIPTION
The MGFS52BN2122A is a 160W push-pull type GaAs power FET
especially designed for use in 2.1 – 2.2GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
High output power
Pout=160W (TYP.) @f=2.17GHz
High power gain
GLP=12.0dB (TYP.) @f=2.17GHz
High power added efficiency
P.A.E.=48% (TYP.) @f=2.17GHz
APPLICATION
2.1-2.2GHz band power amplifier for W-CDMA Base Station
QUALITY
IG
OUTLINE
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=4.0A RG=5ohm for each gate
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-20
VGSO Gate to source breakdown voltage
-10
PT *1 Total power dissipation
187.5
Tch Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
GLP
Linear Power Gain
Pout
Output Power
ID Drain current
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 :Channel-case
VDS=12V,ID(RF off)=4.0A,f=2.17GHz
Pin=32dBm
VDS=12V,ID(RF off)=4.0A,f=2.17GHz
Pin=43dBm
delta Vf method
Min.
11
50.8
-
-
-
Limits
Typ.
12
51.8
23
48
0.55
Max.
-
-
30
-
0.8
Unit
dB
dBm
A
%
C/W
P li i D e : A r.,
1

MGFS52BN2122A
< L/S band internally matched power GaAs FET >
MGFS52BN2122A
2.1 – 2.2 GHz BAND / 160W
MGFS52BN2122A TYPICAL CHARACTERISTICS
Pout , Id , PAE , GAIN , ΔGAIN , ΔPHASE vs. Pin (CW 1-tone)
f=2.11GHz
f=2.14GHz
f=2.17GHz
Test Condition : Vds=12V,Idq=4A,Ta=25deg.C
P li i D e : A r.,


Features < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BA ND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FE T especially designed for use in 2.1 2.2GHz band amplifiers. The hermetica lly sealed metal-ceramic package guaran tees high reliability. FEATURES Push-pu ll configuration  High output power Pout=160W (TYP.) @f=2.17GHz  High po wer gain GLP=12.0dB (TYP.) @f=2.17GHz High power added efficiency P.A.E.=4 8% (TYP.) @f=2.17GHz APPLICATION  2. 1-2.2GHz band power amplifier for W-CDM A Base Station QUALITY  IG OUTLINE RECOMMENDED BIAS CONDITIONS  VDS=12 V  ID=4.0A  RG=5ohm for each gate Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -20 VGSO G ate to source breakdown voltage -10 P T *1 Total power dissipation 187.5 Tc h Cannel temperature 175 Tstg Storage temperature *1 : Tc=25C -65 to +17 5 Unit V V W C C Keep Safety first in your circuit desi.
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