ML792E32 LASER DIODE Datasheet

ML792E32 Datasheet, PDF, Equivalent


Part Number

ML792E32

Description

(ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

Manufacture

Mitsubishi Electric

Total Page 2 Pages
Datasheet
Download ML792E32 Datasheet


ML792E32
Notice: Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML7xx32 SERIES
10Gbps InGaAsP DFB LASER DIODE
TYPE ML792E32/ML792H32
NAME
DES C RIPTIO N
APPLICATION
ML7xx32 series are uncooled DFB (Distributed Feedback) laser
10Gbps Ethernet/Short Reach
diodes for 10Gbps transmission emitting light beam at 1310nm.
λ /4 phase shifted grating structure is employed to obtain excellent ***S pecification Note
SMSR performance under 10Gbps modulation. Furthermore, ML7xx32
is able to operate in the wide temperature range from 0oC to 85oC
Type
Matching Resistance :Rs
without temperature control.
FEATURES
ML792E32-01
ML792H32-01
42 ± 1 ohm
λ /4 phase shifted grating structure
Wide temperature range operation ( 0 oC to 85oC )
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 15GHz)
Chip-on-carrier
ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com
Symbol
P arameter
If Laser forward current
VRL
Tc
Laser reverse voltage
Operation temperature
Tstg Storage temperature
Conditions
-
-
-
-
Ratings
120
2
0 ~ +85
-40 ~+100
Unit
mA
V
oC
oC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25oC)
Symbol
P arameter
Conditions
Ith
Iop
Vop
η
λp
SMSR
θ
θ⊥
fr
tr
tf
Threshold current
CW
CW,Tc=85oC
Operation current
Operating voltage
Slope efficiency
CW,Po=5mW
CW,Po=5mW,Tc=85oC
CW,Po=5mW
CW,Po=5mW
Peak wavelength
Side mode suppression ratio
CW,Po=5mW,Tc= 0 oC ~ +85oC
CW,Po=5mW,Tc= 0 oC ~ +85oC
Beam divergence angle (parallel) CW,Po=5mW
(perpendicular) CW,Po=5mW
Resonance frequency
Rise time(20%-80%)
Fall time(20%-80%)
10Gbps, Ex=7dB, Vpp=2.0V
10Gbps, Ex=7dB, Vpp=2.0V
4th order Bessel - Thompson Filter
Min.
-
-
-
-
-
0.20
1290
35
-
-
-
-
-
Limits
Typ.
9
30
30
70
1.1
0.25
1310
45
25
30
15
30
30
Max .
20
40
40
90
1. 8
-
1330
-
40
45
-
40
40
Unit
mA
mA
mA
mA
V
mW/mA
nm
dB
d eg.
d eg.
GHz
psec
MITSUBISHI
ELECTRIC
Mar. 2003

ML792E32
OUTLINE DRAWINGS
ML792E32
ML792H32
Beam Point
Rs
MITSUBISHI LASER DIODES
ML7XX32 SERIES
10Gbps InGaAsP DFB-LASER DIODE
(2)
Rs
Beam Point
2.1 ± 0.05
(1) Case
Beam Point
RRs s
(2)
Rs
Beam Point
2.1 ± 0.05
(1) Case
MITSUBISHI
ELECTRIC
Mar. 2003


Features MITSUBISHI LASER DIODES ML7xx32 SERIES Notice: Some parametric limits are subj ect to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APP LICATION 10Gbps Ethernet/Short Reach D ESCRIPTION ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ /4 phase shifted gr ating structure is employed to obtain e xcellent SMSR performance under 10Gbps modulation. Furthermore, ML7xx32 is abl e to operate in the wide temperature ra nge from 0 oC to 85 oC without temperat ure control. ***S pecification Note Ty pe ML792E32-01 ML792H32-01 Matching Res istance :Rs 42 ± 1 ohm FEATURES λ /4 phase shifted grating structure Wide t emperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www.D ataSheet4U.com ABSOLUTE MAXIMUM RATING S Symbol If VRL Tc Tstg P arameter Lase r forward current Laser reverse voltage Operation temperature Stor.
Keywords ML792E32, datasheet, pdf, Mitsubishi Electric, ML7xx32, 10Gbps, InGaAsP, DFB, LASER, DIODE, L792E32, 792E32, 92E32, ML792E3, ML792E, ML792, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)