ML925J40F LASER DIODE Datasheet

ML925J40F Datasheet, PDF, Equivalent


Part Number

ML925J40F

Description

(ML9xx40) 2.5Gbps InGaAsP DFB LASER DIODE

Manufacture

Mitsubishi Electric

Total Page 3 Pages
Datasheet
Download ML925J40F Datasheet


ML925J40F
Notice : Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9XX40 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE ML925B40F / ML920J40S
NAME ML925J40F / ML920L40S
DESCRIPTION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0oC to 85 oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
FEATURES
· λ/4 shifted grating structure
· Wide temperature range operation (0oC to 85oC)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
VRL
IFD
VRD
Parameter
Output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
Tc Case temperature
Tstg Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
6
150
2
2
20
0 to +85
-40 to +100
Unit
mW
mA
V
mA
V
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Parameter
Test conditions
Ithwww.DataSheet4U.com
Threshold current
CW
CW <*1>
Tc=85ºC
<*2>
Iop Operation current
CW, Po=5mW
CW, Po=5mW
<*1>
Tc=85ºC
<*2>
Vop Operating voltage
CW, Po=5mW
η Slope efficiency
CW, Po=5mW
CW, Po=5mW <*3>
λp Peak wavelength
CW, Po=5mW
SMSR
Side mode suppression ratio
Side mode suppression ratio(RF)
CW, Po=5mW, Tc=0 to 85ºC
2.48832Gbps,Ib=Ith, Ipp=40mA
θ // Beam divergence angle (parallel) <*6> CW, Po=5mW
θ (perpendicular) <*6> CW, Po=5mW
fr Resonance frequency
2.48832Gbps,Ib=Ith, Ipp=40mA
tr,tf Rise and Fall time <*7>
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
Im Monitoring output current (PD)
CW, Po=5mW,VRD=1V,RL=10
Id Dark current (PD)
VRD=5V
Ct Capacitance (PD)
VRD=5V
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
Min. Typ. Max.
--- 10 15
--- 35 40
--- 45 50
--- 35 45
--- 70 80
--- 90 100
--- 1.1 1.5
0.17 0.22 ---
0.15 0.20 ---
<*4>,<*5>
35 45 ---
--- 45 ---
--- 25 ---
--- 30 ---
Unit
mA
mA
V
mW/mA
nm
dB
deg.
deg.
--- 11 --- GHz
--- 80 120
0.1 --- 1.0
--- --- 0.1
--- 10 20
ps
mA
µA
pF
MITSUBISHI
ELECTRIC
Feb. 2005

ML925J40F
Notice : Some parametric limits are subject to change
<*4> Peak Wavelength
Type
ML925B40F-01 / ML920J40S-01
ML925J40F-01 / ML920L40S-01
ML925B40F-04 / ML920J40S-04
ML925J40F-04 / ML920L40S-04
ML925B40F-05 / ML920J40S-05
ML925J40F-05 / ML920L40S-05
ML925B40F-06 / ML920J40S-06
ML925J40F-06 / ML920L40S-06
ML925B40F-07 / ML920J40S-07
ML925J40F-07 / ML920L40S-07
ML925B40F-08 / ML920J40S-08
ML925J40F-08 / ML920L40S-08
ML925B40F-09 / ML920J40S-09
ML925J40F-09 / ML920L40S-09
ML925B40F-10 / ML920J40S-10
ML925J40F-10 / ML920L40S-10
ML925B40F-11 / ML920J40S-11
ML925J40F-11 / ML920L40S-11
Symbol
λp
<*5> Peak Wavelength
Type
ML925B40F-12 / ML920J40S-12
ML925J40F-12 / ML920L40S-12
ML925B40F-13 / ML920J40S-13
ML925J40F-13 / ML920L40S-13
ML925B40F-14 / ML920J40S-14
ML925J40F-14 / ML920L40S-14
ML925B40F-15 / ML920J40S-15
ML925J40F-15 / ML920L40S-15
ML925B40F-16 / ML920J40S-16
ML925J40F-16 / ML920L40S-16
ML925B40F-17 / ML920J40S-17
ML925J40F-17 / ML920L40S-17
ML925B40F-18 / ML920J40S-18
ML925J40F-18 / ML920L40S-18
ML925B40F-19 / ML920J40S-19
ML925J40F-19 / ML920L40S-19
Symbol
λp
MITSUBISHI LASER DIODES
ML9XX40 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
Test Condition
CW, Po=5mW
Tc= 0 to 85ºC
CW, Po=5mW
Tc= 25ºC
Min.
1530
Limits
Typ.
1550
Max.
1570
Unit
1467 1470 1473
1487 1490 1493
1507 1510 1513
1527 1530 1533 nm
1547 1550 1553
1567 1570 1573
1587 1590 1593
1607 1610 1613
Test Condition
CW, Po=5mW
Tc= 25ºC
Min.
1468
Limits
Typ.
1470
Max.
1472
Unit
1488 1490 1492
1508 1510 1512
1528 1530 1532
1548 1550 1552
nm
1568 1570 1572
1588 1590 1592
1608 1610 1612
MITSUBISHI
ELECTRIC
Feb. 2005


Features MITSUBISHI LASER DIODES ML9XX40 SERIES Notice : Some parametric limits are sub ject to change 2.5Gbps InGaAsP DFB LASE R DIODE TYPE NAME DESCRIPTION ML925B4 0F / ML920J40S ML925J40F / ML920L40S AP PLICATION · 2.5Gbps long-haul transmis sion · Coarse WDM application ML9XX40 series are uncooled DFB (Distributed F eedback) laser diodes for 2.5Gbps trans mission emitting light beam at 1470~161 0nm. λ/4 shifted grating structure is employed to obtain excellent SMSR perfo rmance under 2.5Gbps modulation. Furthe rmore, ML9xx40 can operate in the wide temperature range from 0oC to 85 oC wit hout any temperature control. They are well suited for light source in long di stance digital transmission application of coarse WDM. FEATURES · λ/4 shift ed grating structure · Wide temperatur e range operation (0oC to 85oC) · High side-mode-suppression-ratio (typical 4 5dB) · High resonance frequency (typic al 11GHz) ABSOLUTE MAXIMUM RATINGS Sym bol Po If VRL IFD VRD Tc Tstg Parameter Output power Forward current (L.
Keywords ML925J40F, datasheet, pdf, Mitsubishi Electric, ML9xx40, 2.5Gbps, InGaAsP, DFB, LASER, DIODE, L925J40F, 925J40F, 25J40F, ML925J40, ML925J4, ML925J, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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