LASER DIODES. ML925J16F Datasheet


ML925J16F DIODES. Datasheet pdf. Equivalent


Part Number

ML925J16F

Description

(ML9xxxx) InGaAsP DFB LASER DIODES

Manufacture

Mitsubishi Electric

Total Page 3 Pages
Datasheet
Download ML925J16F Datasheet


ML925J16F
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
TYPE
NAME
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
·~1.25Gbps digital transmission system
· Coarse WDM application
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( 0 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· 8 wavelength with 20nm space at 1470 ~ 1610nm
· φ5.6mm TO-CAN package
· Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Po Light output power
If Forward current (Laser diode)
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VRL
VRD
IFD
Reverse voltage (Laser diode)
Reverse voltage (Photo diode)
Forward current (Photo diode)
Tc Case temperature
Tstg Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
10
150
2
20
2
0 to +85
-40 to +100
Unit
mW
mA
V
V
mA
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ith Threshold current
CW
CW, Tc=85ºC
--- 8
--- 30
15
50
mA
Iop Operation current
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
---
---
25
60
40
80
mA
Vop Operating voltage
CW, Po=5mW
--- 1.1 1.5
V
η Slope efficiency
CW, Po=5mW
0.20 0.28
--- mW/mA
λp Peak wavelength
CW, Po=5mW
<**>
nm
θ // Beam divergence angle (parallel) CW, Po=5mW
--- 25
35 deg.
Beam divergence angle
θ (perpendicular)
CW, Po=5mW
--- 35
45 deg.
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= 0 to +85ºC
35 40 --- dB
tr,tf Rise and Fall time
Ib=Ith, 20-80% <*>
--- 0.1 0.2
ns
Im Monitoring output current (PD) CW, Po=5mW
0.05 0.2 --- mA
Id Dark current (PD)
Ct Capacitance (PD)
VRD=5V
VRD=5V
--- --- 0.1 µA
--- 10 20 pF
<*> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Dec. 2004

ML925J16F
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S]
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ith Threshold current
CW
CW, Tc=85ºC
--- 8
--- 30
15
50
mA
Iop Operation current
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
---
---
25
60
40
80
mA
Vop Operating voltage
CW, Po=5mW
--- 1.1 1.5
V
η Slope efficiency
λp Peak wavelength
CW, Po=5mW
CW, Po=5mW
0.20 0.28
<**>
--- mW/mA
nm
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= 0 to +85ºC
35 40 --- dB
Pf Fiber coupling power
CW, Po=5mW, SMF
1.5 2.0
--- mW
Df Focul length
CW, Po=5mW, SMF
6.5 7.5 8.5 mm
tr,tf Rise and Fall time
Ib=Ith, 20-80% <*>
--- 0.1 0.2
ns
Im Monitoring output current (PD) CW, Po=5mW
0.05 0.2 --- mA
Id Dark current (PD)
Ct Capacitance (PD)
VRD=5V
VRD=5V
--- --- 0.1 µA
--- 10 20 pF
<*> Except influence of the 18mm lead.
<**> Peak wavelength
Type
ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04
ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05
ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04
ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05
ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06
ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04
ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05
ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06
Symb
ol
λp
Test
condition
CW
Po=5mW
Tc=25ºC
Min.
1467
1487
1507
1527
1547
1567
1587
1607
Limits
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1473
1493
1513
1533
1553
1573
1593
1613
Unit
nm
MITSUBISHI
ELECTRIC
Dec. 2004


Features MITSUBISHI LASER DIODES ML9XX11,ML9XX16 ,ML9XX22 SERIES Notice : Some parametri c limits are subject to change InGaAsP DFB LASER DIODES TYPE NAME ML925B11F / ML925B16F / ML925B22F ML920J11S / ML 920J16S / ML920J22S ML925J11F / ML925J1 6F / ML925J22F ML920L11S / ML920L16S / ML920L22S APPLICATION ·~1.25Gbps digit al transmission system · Coarse WDM ap plication DESCRIPTION ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distribute d Feedback) laser diodes emitting light beam with emission wavelength of 1470 ~ 1610 nm. They are well suited for lig ht source in long distance digital tran smission application of coarse WDM. The y are hermetically sealed devices with the photo diode for optical output moni toring. FEATURES · Homogeneous gratin g (AR/HR facet coating) structure DFB Wide temperature range operation ( 0 to 85ºC ) · Low threshold current (ty pical 8mA) · High speed response (typi cal 0.1nsec) · 8 wavelength with 20nm space at 1470 ~ 1610nm · φ5.6mm TO-CAN package · Flat window cap, or As.
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