LASER DIODES. ML925B22F Datasheet


ML925B22F DIODES. Datasheet pdf. Equivalent


ML925B22F


(ML9xxxx) InGaAsP DFB LASER DIODES
MITSUBISHI LASER DIODES

ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change

InGaAsP DFB LASER DIODES

TYPE NAME

ML925B11F / ML925B16F / ML925B22F ML920J11S / ML920J16S / ML920J22S ML925J11F / ML925J16F / ML925J22F ML920L11S / ML920L16S / ML920L22S
APPLICATION
·~1.25Gbps digital transmission system · Coarse WDM application

DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength of 1470 ~ 1610 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring.

FEATURES
· Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( 0 to 85ºC ) · Low threshold current (typical 8mA) · High speed response (typical 0.1nsec) · 8 wavelength with 20nm space at 1470 ~ 1610nm · φ5.6mm TO-CAN package · Flat window cap, or Aspherical lens cap

ABSOLUTE MAXIMUM RATINGS
Symbol Po If www.DataSheet4U.com VRL VRD IFD Tc Tstg Parameter Light output power Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo diode) Forward current (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 10 150 2 20 2 0 to +85 -40 to +100 Unit mW mA V V mA

ºC ºC

ELECTRICAL/OPTICAL CHA...



ML925B22F
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
TYPE
NAME
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
·~1.25Gbps digital transmission system
· Coarse WDM application
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( 0 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· 8 wavelength with 20nm space at 1470 ~ 1610nm
· φ5.6mm TO-CAN package
· Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Po Light output power
If Forward current (Laser diode)
www.DataSheet4U.com
VRL
VRD
IFD
Reverse voltage (Laser diode)
Reverse voltage (Photo diode)
Forward current (Photo diode)
Tc Case temperature
Tstg Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
10
150
2
20
2
0 to +85
-40 to +100
Unit
mW
mA
V
V
mA
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ith Threshold current
CW
CW, Tc=85ºC
--- 8
--- 30
15
50
mA
Iop Operation current
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
---
---
25
60
40
80
mA
Vop Operating voltage
CW, Po=5mW
--- 1.1 1.5
V
η Slope efficiency
CW, Po=5mW
0.20 0.28
--- mW/mA
λp Peak wavelength
CW, Po=5mW
<**>
nm
θ // Beam divergence angle (parallel) CW, Po=5mW
--- 25
35 deg.
Beam divergence angle
θ (perpendicular)
CW, Po=5mW
--- 35
45 deg.
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= 0 to +85ºC
35 40 --- dB
tr,tf Rise and Fall time
Ib=Ith, 20-80% <*>
--- 0.1 0.2
ns
Im Monitoring output current (PD) CW, Po=5mW
0.05 0.2 --- mA
Id Dark current (PD)
Ct Capacitance (PD)
VRD=5V
VRD=5V
--- --- 0.1 µA
--- 10 20 pF
<*> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Dec. 2004

ML925B22F
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S]
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ith Threshold current
CW
CW, Tc=85ºC
--- 8
--- 30
15
50
mA
Iop Operation current
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
---
---
25
60
40
80
mA
Vop Operating voltage
CW, Po=5mW
--- 1.1 1.5
V
η Slope efficiency
λp Peak wavelength
CW, Po=5mW
CW, Po=5mW
0.20 0.28
<**>
--- mW/mA
nm
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= 0 to +85ºC
35 40 --- dB
Pf Fiber coupling power
CW, Po=5mW, SMF
1.5 2.0
--- mW
Df Focul length
CW, Po=5mW, SMF
6.5 7.5 8.5 mm
tr,tf Rise and Fall time
Ib=Ith, 20-80% <*>
--- 0.1 0.2
ns
Im Monitoring output current (PD) CW, Po=5mW
0.05 0.2 --- mA
Id Dark current (PD)
Ct Capacitance (PD)
VRD=5V
VRD=5V
--- --- 0.1 µA
--- 10 20 pF
<*> Except influence of the 18mm lead.
<**> Peak wavelength
Type
ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04
ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05
ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04
ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05
ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06
ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04
ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05
ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06
Symb
ol
λp
Test
condition
CW
Po=5mW
Tc=25ºC
Min.
1467
1487
1507
1527
1547
1567
1587
1607
Limits
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1473
1493
1513
1533
1553
1573
1593
1613
Unit
nm
MITSUBISHI
ELECTRIC
Dec. 2004




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