ML9SM41 DFB-LASER DIODE Datasheet

ML9SM41 Datasheet, PDF, Equivalent


Part Number

ML9SM41

Description

InGaAsP DFB-LASER DIODE

Manufacture

Mitsubishi Electric

Total Page 2 Pages
Datasheet
Download ML9SM41 Datasheet


ML9SM41
Notice: Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
TYPE
NAME
ML9SM41
DESCRIPTION
ML9XX41 series are DFB (Distributed Feedback) laser diodes with a
monolithically integrated EA modulator, suitable light source for 10Gbps
application.
ML9SM41 is supplied with the chip-on-carrier type package.
FEATURES
Dispersion penalty less than 2dB at 9.95328Gbps, +1600ps/nm
High extinction ratio (Min. 10dB at 9.95328Gbps)
High - side mode suppression ratio (Typ. 40dB)
High speed response (Typ. 30psec)
APPLICATION
10Gbps transmission system
ABSOLUTE MAXIMUM RATINGS
Symbol
IF
VRL
VEA
Tc
Tstg
Parameter
Forward current (Laser diode)
Reverse voltage (Laser diode)
Reverse voltage (Modulator)
Case temperature
Storage temperature
www.DataSheet4U.com
Conditions
CW
-
-
-
-
Ratings
150
2
-3
+25 to +40
-40 to +100
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=35degC)
Symbol
Ith
Iop
Vop
λp
θ//
θ⊥
Pm
fc
tr,tf
SMSR
Ex
Pp
Parameter
Threshold current
Operation current
Operating voltage
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
Monitoring output power
Cut off frequency
Rise and fall time (20%-80%)
Side mode suppression ratio
Extinction ratio
Dispersion penalty
Test Conditions
CW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, If=Iop, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, Po=6.5mW, Vmod=0V
CW, If=Iop, Vmod=-1V
9.95328Gbps, NRZ, PRBS 223-1
If=Iop, Vpp=2V,
Voffset=0 to -1.0V
ditto
+1600ps/nm @BER=10-10
Min.
---
---
---
1530
---
---
---
10
---
35
10
---
Unit
mA
V
V
degC
degC
Typ. Max.
15 30
85 100
1.6 1.8
--- 1565
30 ---
42 ---
2.0 ---
14 ---
--- 30
40 ---
--- ---
--- 2.0
Unit
mA
mA
V
nm
deg.
deg.
mW
GHz
psec
dB
dB
dB
MITSUBISHI
ELECTRIC
Mar. 2006

ML9SM41
Notice: Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
OUTLINE DRAWINGS
ML9SM41
Beam
Point
(3) (2)
1.08 (1)
Front
(3) (3)
(2)
0.15 0.6
0.15
Rear
EAM
LD
(1) Case
ML9SM41
*) The LD and EAM cathode is contacted
with the back side of the carrier.
MITSUBISHI
ELECTRIC
Mar. 2006


Features MITSUBISHI LASER DIODES Notice: Some pa rametric limits are subject to change. ML9XX41 SERIES InGaAsP DFB-LASER DIODE WITH EA MODULATOR TYPE NAME DESCRIPTI ON ML9SM41 FEATURES • Dispersion pen alty less than 2dB at 9.95328Gbps, +160 0ps/nm • High extinction ratio (Min. 10dB at 9.95328Gbps) • High - side mo de suppression ratio (Typ. 40dB) • Hi gh speed response (Typ. 30psec) ML9XX4 1 series are DFB (Distributed Feedback) laser diodes with a monolithically int egrated EA modulator, suitable light so urce for 10Gbps application. ML9SM41 is supplied with the chip-on-carrier type package. APPLICATION 10Gbps transmiss ion system ABSOLUTE MAXIMUM RATINGS Sy mbol IF VRL VEA Tc Tstg www.DataSheet4U .com Parameter Forward current (Laser diode) Reverse voltage (Laser diode) Re verse voltage (Modulator) Case temperat ure Storage temperature Conditions CW - Ratings 150 2 -3 +25 to +40 -40 to + 100 Unit mA V V degC degC ELECTRICAL/ OPTICAL CHARACTERISTICS (Tc=35degC) Symbol Ith Iop Vop λp θ// θ⊥ Pm fc .
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