InGaAsP DFB-LASER DIODE
MITSUBISHI LASER DIODES
Notice: Some parametric limits are subject to change.
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE W...
Description
MITSUBISHI LASER DIODES
Notice: Some parametric limits are subject to change.
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
TYPE NAME
DESCRIPTION
ML9SM41
FEATURES
Dispersion penalty less than 2dB at 9.95328Gbps, +1600ps/nm High extinction ratio (Min. 10dB at 9.95328Gbps) High - side mode suppression ratio (Typ. 40dB) High speed response (Typ. 30psec)
ML9XX41 series are DFB (Distributed Feedback) laser diodes with a monolithically integrated EA modulator, suitable light source for 10Gbps application. ML9SM41 is supplied with the chip-on-carrier type package.
APPLICATION
10Gbps transmission system
ABSOLUTE MAXIMUM RATINGS
Symbol IF VRL VEA Tc Tstg
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Parameter Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Modulator) Case temperature Storage temperature
Conditions CW -
Ratings 150 2 -3 +25 to +40 -40 to +100
Unit mA V V degC degC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=35degC)
Symbol Ith Iop Vop λp θ// θ⊥ Pm fc tr,tf SMSR Ex Pp Parameter Threshold current Operation current Operating voltage Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output power Cut off frequency Rise and fall time (20%-80%) Side mode suppression ratio Extinction ratio Dispersion penalty Test Conditions CW, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, If=Iop, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, Po=6.5mW, Vmod=0V CW, If=Iop, Vmod=-1V 9.95328Gbps, NRZ, ...
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