PD55015S-E lateral MOSFETs Datasheet

PD55015S-E Datasheet, PDF, Equivalent


Part Number

PD55015S-E

Description

LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Manufacture

STMicroelectronics

Total Page 27 Pages
Datasheet
Download PD55015S-E Datasheet


PD55015S-E
PD55015-E
PD55015S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
Excellent thermal stability
Common source configuration
POUT = 15W with 14dB gain @ 500MHz / 12.5V
New RF plastic package
Description
www.DataSheet4U.com
The PD55015 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. PD55015 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD55015’s superior linearity performance makes
it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD55015-E
PD55015S-E
PD55015TR-E
PD55015STR-E
August 2006
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Rev 1
Packing
Tube
Tube
Tape and reel
Tape and reel
1/27
www.st.com
27

PD55015S-E
Contents
Contents
PD55015-E, PD55015S-E
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.1 PD55015S (VDS = 12.5V IDS = 225mA) . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.2 PD55015S (VDS = 12.5V IDS = 1.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.3 PD55015S (VDS = 12.5V IDS = 2.25A) . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.4 PD55015 (VDS = 12.5V IDS = 225mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.5 PD55015 (VDS = 12.5V IDS = 1.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7.6 PD55015 (VDS = 12.5V IDS = 2.25A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2/27


Features PD55015-E PD55015S-E RF POWER transistor , LDMOST plastic family N-Channel enhan cement-mode lateral MOSFETs General fea tures ■ ■ ■ ■ Excellent therma l stability Common source configuration POUT = 15W with 14dB gain @ 500MHz / 1 2.5V New RF plastic package PowerSO-10R F (formed lead) Description The PD5501 5 is a common source N-Channel, enhance ment-mode lateral Field-Effect RF power transistor. It is designed for high ga in, broad band commercial and industria l applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the first true SMD plastic RF power pac kage, PowerSO-10RF. PD55015’s superio r linearity performance makes it an ide al solution for car mobile radio. www. DataSheet4U.com PowerSO-10RF (straight lead) Pin connection The PowerSO-10 p lastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has.
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