RA07H4452M

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M BLOCK DIAGRAM 2 3 RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW ηT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW Broadband Frequency Range: 440-520MHz www.DataSheet4U.com Low-Power Control Current IGG=1mA (typ) at VGG=3.5V Module Size: 30 x 10 x 5.4 mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the o...