RoHS Compliance. RA07M4047M Datasheet


RA07M4047M Compliance. Datasheet pdf. Equivalent


RA07M4047M


RoHS Compliance
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RA07M4047M
BLOCK DIAGRAM
2 3

RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

DESCRIPTION The RA07M4047M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V) • Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW • ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW • Broadband Frequency Range: 400-470MHz www.DataSheet4U.com • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operat...



RA07M4047M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07M4047M
RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M4047M is a 7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
ηT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
www.DataSheet4U.coLm ow-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA07M4047M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA07M4047M-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07M4047M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006

RA07M4047M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA07M4047M
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD Drain Voltage
VGG<3.5V
VGG Gate Voltage
VDD<7.2V, Pin=0mW
Pin Input Power
Pout Output Power
f=400-470MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
9.2
4
70
10
-30 to +90
-40 to +110
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
400 470 MHz
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
VDD=7.2V,VGG=3.5V, Pin=50mW
Pout=6.5W (VGG control),
VDD=7.2V,
Pin=50mW
7W
40 %
-25 dBc
4:1 —
1 mA
— Stability
VDD=4.0-9.2V, Pin=25-70mW, Pout<8W (VGG control),
Load VSWR=4:1
No parasitic oscillation
Load VSWR Tolerance
VDD=9.2V, Pin=50mW, Pout=7W (VGG control),
Load VSWR=20:1
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M4047M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006




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