RA07M4452M Power Modules Datasheet

RA07M4452M Datasheet, PDF, Equivalent


Part Number

RA07M4452M

Description

Silicon RF Power Modules

Manufacture

Mitsubishi Electric

Total Page 10 Pages
Datasheet
Download RA07M4452M Datasheet


RA07M4452M
< Silicon RF Power Modules >
RA07M4452M
RoHS Compliance, 440-520MHz 7W 7.2V, 2 Stage Amp. For Portable Radio
DESCRIPTION
The RA07M4452M is a 7-watt RF MOSFET Amplifier Module for
7.2-volt portable radios that operate in the 440- to 520-MHz
range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the
RF input signal attenuates up to 60 dB. The output power and drain
current increase as the gate voltage increases. With a gate voltage
around 2.5V (minimum), output power and drain current increases
substantially. The nominal output power becomes available at 3V
(typical) and 3.5V (maximum).
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
FEATURES
3 Drain Voltage (VDD), Battery
• Enhancement-Mode MOSFET Transistors
(IDD 0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range:440-520MHz
• Module Size: 30 x 10 x 5.4 mm
4 RF Output (Pout)
5 RF Ground (FIN)
PACKAGE CODE: H46S
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the
output power with the input power
RoHS COMPLIANCE
• RA07M4452M is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA07M4452M-501
SUPPLY FORM
Antistatic tray,
50 modules/tray
Publication Date :Jun.2017
1

RA07M4452M
< Silicon RF Power Modules >
RA07M4452M
RoHS Compliance, 440-520MHz 7W 7.2V, 2 Stage Amp. For portable Radio
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG=0V, Pin=0W
VDD Drain Voltage
ZL=50 ,VGG3.5V
VGG Gate Voltage
-
IDD Total Current
-
Pin Input Power
f=440-520MHz, VGG3.5V
ZG=ZL=50
Pout Output Power
Ditto
Tcase(OP) Operation Case Temperature Range
Ditto
Tstg Storage Temperature Range
-
The above parameters are independently guaranteed.
RATING
12
9.2
4
3.5
70
10
-30 to +110
-40 to +110
UNIT
V
V
V
A
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F Frequency Range
- 440 - 520 MHz
Pout Output Power
VDD=7.2V, VGG=3.5V, Pin=50mW
T Total Efficiency
2f0 2nd Harmonic
3f0 3rd Harmonic
VDD=7.2V,
Pout=6.5W (VGG control),
Pin=50mW
in Input VSWR
IDD Leakage Current
VDD=9.2V, VGG=0V, Pin=0W
VDD=9.2V, Pin=50mW,
— Load VSWR Tolerance Pout=7W (VGG control),
Load VSWR = 20:1(All Phase)
7-
-W
40 -
-%
- - -25 dBc
- - -30 dBc
- - 4:1 —
- - 100 uA
No degradation or
destroy
— Stability
VDD=4.0 / 7.2 / 9.2V,
VGG =0-3.5V,
Pout8W, Pin=25 / 50 / 70mW,
Load VSWR = 4:1(All Phase)
No parasitic oscillation
more than
-60dBc
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jun.2017
2


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA07M4452M BLOCK DIAGRAM 2 3 RoHS Compliance , 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRI PTION The RA07M4452M is a 7-watt RF MOS FET Amplifier Module for 7.2-volt porta ble radios that operate in the 440- to 520-MHz range. The battery can be conne cted directly to the drain of the enhan cement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a smal l leakage current flows into the drain and the RF input signal attenuates up t o 60 dB. The output power and drain cur rent increase as the gate voltage incre ases. With a gate voltage around 2.5V ( minimum), output power and drain curren t increases substantially. The nominal output power becomes available at 3V (t ypical) and 3.5V (maximum). At VGG=3.5V , the typical gate current is 1 mA. Thi s module is designed for non-linear FM modulation, but may also be used for li near modulation by setting the drain quiescent current with the.
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