RA13H1317M MOBILE RADIO Datasheet

RA13H1317M Datasheet, PDF, Equivalent


Part Number

RA13H1317M

Description

MOBILE RADIO

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RA13H1317M Datasheet


RA13H1317M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA13H1317M
135-175MHz 13W 12.5V MOBILE RADIO
DESCRIPTION
The RA13H1317M is a 13-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175 MHz
• Low-Power
www.DataSheet4U.com
Control
Current
IGG=1mA
(typ)
at
VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA13H1317M-E01
RA13H1317M-01
(Japan - Packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA 13H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002

RA13H1317M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H1317M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=135-175MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
20
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
f Frequency Range
135 175
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5 V
VGG=5V
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<20W (VGG control), Load VSWR=3:1
— Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=13W (VGG control),
Load VSWR=20:1
13
40
-25
3:1
1
No parasitic oscillation
No degradation or
destroy
UNIT
MHz
W
%
dBc
mA
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 13H1317M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA13H1317M 135-175MHz 13W 12. 5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESC RIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt m obile radios that operate in the 135- t o 175-MHz range. The battery can be con nected directly to the drain of the enh ancement-mode MOSFET transistors. Witho ut the gate voltage (V GG=0V), only a s mall leakage current flows into the dra in and the RF input signal attenuates u p to 60 dB. The output power and drain current increase as the gate voltage in creases. With a gate voltage around 4V (minimum), output power and drain curre nt increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM m odulation, but may also be used for lin ear modulation by setting the drain qui escent current with the gate voltage and controlling the output.
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